K9F1208U0M- SAMSUNG [Samsung semiconductor], K9F1208U0M- Datasheet - Page 13

• Manufacturer Part Number: K9F1208U0M-
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

AC Timing Characteristics for Command / Address / Data Input
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
K9F1208U0M-YCB0, K9F1208U0M-YIB0
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay( ID read )
ALE to RE Delay(Read cycle)
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)
CE Access Time
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
NOTE :
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Parameter
(2)
Symbol
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
WC
WH
WP
CS
CH
DS
DH
13
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHR
CLR
t
t
t
REA
RHZ
CHZ
REH
t
CRY
CEH
CEA
RST
AR1
AR2
WB
t
t
RR
RC
OH
RP
RB
IR
R
25
Min
10
10
10
20
10
50
15
0
0
0
(1)
Min
100
10
50
50
20
30
50
15
15
60
0
-
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
50 +tr(R/B)
-
-
-
-
-
-
-
-
-
-
-
5/10/500
Max
100
100
12
35
30
20
45
-
-
-
-
-
-
-
-
-
-
-
(3)
(1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s