HYS64T128020GU-37-A INFINEON [Infineon Technologies AG], HYS64T128020GU-37-A Datasheet - Page 23

• Manufacturer Part Number: HYS64T128020GU-37-A
• Description: 240-Pin Unbuffered DDR2 SDRAM Modules
• Manufacturer: INFINEON [Infineon Technologies AG]

3
3.1
Table 13
Parameter
Voltage on any pins relative to
Voltage on V
Voltage on V
Storage temperature range
Storage Humidity (without condensation)
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
Table 14
Parameter
DIMM Module Operating Temperature Range (ambient)
DRAM Component Case Temperature Range
Barometric Pressure (operating & storage)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the
2) Within the DRAM Component Case Temperature range all DRAM specification will be supported.
3)
4) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the
Table 15
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
EEPROM Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
1)
2)
3)
Data Sheet
Parameter
DRAMs. For measurement conditions, please refer to the JEDEC document JESD51-2.
Above 85°C DRAM case temperature the Auto-Refresh command interval has to be reduced to
DRAM is below 85°C case temperature before initiating self-refresh operation.
Under all conditions,
Peak to peak AC noise on
in
Voltage for pin connector under test input of 0 V ≤
device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
V
DDQ
.
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
Operating Conditions
Supply Voltage Levels and DC Operating Conditions
DD
DD Q
relative to
relative to
V
V
DDQ
SS
V
SS
V
must be less than or equal to
V
REF
HYS[64T[3200/6400/12802]0/72T[6400/12802]0][G/H]U–[3.7/5]–A
Symbol
V
V
V
V
V
V
I
SS
L
DD
DDQ
REF
DDSPD
IH (DC)
IL (DC)
may not exceed ± 2%
Limit Values
min.
1.7
1.7
0.49 x
1.7
V
– 0.30
– 5
REF
+ 0.125
V
V
DDQ
23
IN
V
≤
REF
V
V
DDQ
nom.
1.8
1.8
0.5 x
–
–
–
DD
(DC).
Symbol
T
T
PBar
+ 0.3 V; all othe pins at 0 V. Current is per pin
Symbol
V
V
V
T
H
OPR
CASE
HSTG
IN
DD
DDQ
V
STG
V
,
DDQ
REF
V
OUT
is also expected to track noise variations
min.
0
0
+69
max.
1.9
1.9
0.51 x
3.6
V
V
5
Limit Values
min.
– 0.5
– 1.0
– 0.5
-55
5
Limit Values
DDQ
REF
512 Mbit DDR2 SDRAM
– 0.125
+ 0.3
V
Electrical Characteristics
max.
+55
+95
+105
DDQ
09122003-GZEK-H4J6
max.
2.3
2.3
2.3
+100
95
Rev. 0.87, 2004-06
Unit
V
V
V
V
V
V
µA
Unit
°C
°C
kPa
t
REFI
Notes
-
1)
2)
3)
= 3.9 µs.
Notes
1)2)3)4)
Unit
V
V
°C
%