GS8320E18T-150 GSI [GSI Technology], GS8320E18T-150 Datasheet

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GS8320E18T-150

Manufacturer Part Number
GS8320E18T-150
Description
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
• Single Dual Cycle Deselect (SDCD) operation
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
Functional Description
Applications
The GS8320E18/32/36T-xxxV is a 37,748,736-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip
set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
operation
Through
Pipeline
3-1-1-1
2-1-1-1
Flow
2M x 18, 1M x 32, 1M x 36
36Mb Sync Burst SRAMs
Curr
Curr
Curr
Curr
tCycle
tCycle
t
t
(x32/x36)
(x32/x36)
KQ
KQ
(x18)
(x18)
Parameter Synopsis
1/24
-250 -225 -200 -166 -150 -133 Unit
285
350
205
235
3.0
4.0
6.5
6.5
265
320
195
225
3.0
4.4
7.0
7.0
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
pin (Pin 14)DCD Pipelined Reads
The GS8320E18/32/36T-xxxV is a DCD (Dual Cycle
Deselect) pipelined synchronous SRAM. SCD (Single Cycle
Deselect) versions are also available. DCD SRAMs pipeline
disable commands to the same degree as read commands. DCD
RAMs hold the deselect command for one full cycle and then
begin turning off their outputs just after the second rising edge
of clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS8320E18/32/36T-xxxV operates on a 1.8 V or 2.5 V
power supply. All inputs are 1.8 V or 2.5 V compatible.
Separate output power (V
output noise from the internal circuits and are 1.8 V or 2.5 V
compatible.
245
295
185
210
3.0
5.0
7.5
7.5
220
260
175
200
3.5
6.0
8.0
8.0
210
240
165
190
3.8
6.6
8.5
8.5
185
215
155
175
4.0
7.5
8.5
8.5
mA
mA
mA
mA
DDQ
ns
ns
ns
ns
GS8320E18/32/36T-xxxV
) pins are used to decouple
© 2001, GSI Technology
250 MHz–133 MHz
1.8 V or 2.5 V V
1.8 V or 2.5 V I/O
Preliminary
DD

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GS8320E18T-150 Summary of contents

Page 1

... RoHS-compliant 100-lead TQFP package available Functional Description Applications The GS8320E18/32/36T-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support ...

Page 2

... DDQ Rev: 1.03 6/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8320E18T-xxxV 100-Pin TQFP Pinout Top View 2/24 Preliminary GS8320E18/32/36T-xxxV ...

Page 3

DDQ ...

Page 4

DQP DDQ ...

Page 5

TQFP Pin Description Symbol Type I ...

Page 6

Register – LBO ADV CK ADSC ADSP Power Down ZZ Control Note: Only x36 version shown ...

Page 7

Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Note: There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and ...

Page 8

Byte Write Truth Table Function GW Read H Read H Write byte a H Write byte b H Write byte c H Write byte d H Write all bytes H Write all bytes L Notes: 1. All byte outputs are ...

Page 9

Synchronous Truth Table Address Operation Used Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst External Read Cycle, Continue Burst Read Cycle, Continue ...

Page 10

Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B that ADSP is tied ...

Page 11

Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles ...

Page 12

Absolute Maximum Ratings (All voltages reference Symbol Voltage on V DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O ...

Page 13

V & V Range Logic Levels DDQ2 DDQ1 Parameter V Input High Voltage DD V Input Low Voltage DD Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica- tions ...

Page 14

AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. ...

Page 15

Rev: 1.03 6/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 15/24 Preliminary GS8320E18/32/36T-xxxV © 2001, GSI Technology ...

Page 16

AC Electrical Characteristics Parameter Symbol Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock ...

Page 17

Begin Read A Cont CK ADSP tS tH ADSC tS ADV tS tH Ao– Ba– tOE DQa–DQd Hi-Z Rev: 1.03 6/2006 Specifications cited are subject ...

Page 18

Begin Read A Cont tKH tKH CK ADSP tS tH ADSC tH tS ADV tS tH Ao– Ba– and E3 only sampled with ADSP and ADSC ...

Page 19

... During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. ...

Page 20

TQFP Package Drawing (Package T) Symbol Description Min. Nom. Max A1 Standoff 0.05 A2 Body Thickness 1.35 b Lead Width 0.20 c Lead Thickness 0.09 D Terminal Dimension 21.9 D1 Package Body 19.9 E Terminal Dimension 15.9 E1 Package Body ...

Page 21

... DCD Synchronous Burst Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8320E18T-150IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 22

... DCD Synchronous Burst Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8320E18T-150IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 23

... DCD Synchronous Burst Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8320E18T-150IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 24

... Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 8320EV18_r1 8320EV18_r1; 8320EV18_r1_01 8320EV18_r1_01; 8320EV18_r1_02 8320EV18_r1_02; 8320Exx_V_r1_03 Rev: 1.03 6/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. • Creation of new datasheet • Updated format Content/Format • ...

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