GS864218B-167IV GSI [GSI Technology], GS864218B-167IV Datasheet

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GS864218B-167IV

Manufacturer Part Number
GS864218B-167IV
Description
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
119- & 209-Pin BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119- and 209-bump BGA package
• RoHS-compliant 119- and 209-bump BGA packages available
Functional Description
Applications
The GS864218/36/72(B/C)-xxxV is a
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications, ranging
from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Flow Through
Pipeline
3-1-1-1
2-1-1-1
75,497,472 -bit high
72Mb S/DCD Sync Burst SRAMs
4M x 18, 2M x 36, 1M x 72
Curr (x18)
Curr (x36)
Curr (x72)
Curr (x18)
Curr (x36)
Curr (x72)
Parameter Synopsis
tCycle
tCycle
t
t
KQ
KQ
)
1/35
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS864218/36/72(B/C)-xxxV is a SCD (Single Cycle
Deselect) and DCD (Dual Cycle Deselect) pipelined synchronous
SRAM. DCD SRAMs pipeline disable commands to the same
degree as read commands. SCD SRAMs pipeline deselect
commands one stage less than read commands. SCD RAMs begin
turning off their outputs immediately after the deselect command
has been captured in the input registers. DCD RAMs hold the
deselect command for one full cycle and then begin turning off
their outputs just after the second rising edge of clock. The user
may configure this SRAM for either mode of operation using the
SCD mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Core and Interface Voltages
The GS864218/36/72(B/C)-xxxV operates on a 1.8 V or 2.5 V
power supply. All inputs are 1.8 V or 2.5 V compatible. Separate
output power (V
the internal circuits and are 1.8 V or 2.5 V compatible.
-250
340
410
520
245
280
370
3.0
4.0
6.5
6.5
-200
290
350
435
220
250
315
3.0
5.0
7.5
7.5
DDQ
-167
260
305
380
210
240
300
3.5
6.0
8.0
8.0
) pins are used to decouple output noise from
Unit
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
GS864218/36/72(B/C)-xxxV
© 2004, GSI Technology
250 MHz–167 MHz
1.8 V or 2.5 V V
1.8 V or 2.5 V I/O
Preliminary
DD

Related parts for GS864218B-167IV

GS864218B-167IV Summary of contents

Page 1

... DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. The user may configure this SRAM for either mode of operation using the SCD mode input. Byte Write and Global Write ...

Page 2

BGA—x72 Common I/O—Top View (Package DQP DQP G ...

Page 3

GS864272C-xxxV 209-Bump BGA Pin Description Symbol Type I ...

Page 4

GS864272C-xxxV 209-Bump BGA Pin Description (Continued) Symbol Type DDQ Rev: 1.03 6/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Description Core power supply I/O and Core ...

Page 5

BGA—x36 Common I/O—Top View DDQ DDQ DDQ DDQ ...

Page 6

BGA—x18 Common I/O—Top View DDQ DDQ DDQ DDQ ...

Page 7

GS864218/36B-xxxV 119-Bump BGA Pin Description Symbol Type I — ...

Page 8

Register – LBO ADV CK ADSC ADSP Power Down ZZ Control Note: Only x36 version shown ...

Page 9

Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Single/Dual Cycle Deselect Control FLXDrive Output Impedance Control Note: There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ...

Page 10

Byte Write Truth Table Function GW Read H Read H Write byte a H Write byte b H Write byte c H Write byte d H Write all bytes H Write all bytes L Notes: 1. All byte outputs are ...

Page 11

Synchronous Truth Table Address Operation Used Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst External Read Cycle, Continue Burst Read Cycle, Continue ...

Page 12

Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B that ADSP is tied ...

Page 13

Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles ...

Page 14

Absolute Maximum Ratings (All voltages reference Symbol Voltage on V DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O ...

Page 15

V & V Range Logic Levels DDQ2 DDQ1 Parameter V Input High Voltage DD V Input Low Voltage DD Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica- tions ...

Page 16

AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. ...

Page 17

Operating Currents Parameter Test Conditions Device Selected; All other inputs Operating ≥V or ≤ V Current IH IL Output open Standby ZZ ≥ V – 0 Current Device Deselected; Deselect All other inputs Current ≥ ≤ ...

Page 18

AC Electrical Characteristics Parameter Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock to ...

Page 19

Begin Read A Cont Single Read Single Read CK ADSP tS tH ADSC tS ADV tS tH A0– Ba– tOE DQa–DQd Rev: 1.03 6/2006 Specifications cited ...

Page 20

Begin Read A Cont tKH tKH CK ADSP tS tH ADSC tS tH ADV tS tH A0– Ba– and E3 only sampled with ADSC tOE ...

Page 21

Begin Read A Cont CK ADSP tS tH ADSC tS ADV tS tH Ao– Ba– tOE DQa–DQd Hi-Z Rev: 1.03 6/2006 Specifications cited are subject ...

Page 22

Begin Read A Cont tKH tKH CK ADSP tS tH ADSC tH tS ADV tS tH Ao– Ba– and E3 only sampled with ADSP and ADSC ...

Page 23

... During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. ...

Page 24

JTAG Pin Descriptions Pin Pin Name I/O Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate TCK Test Clock In from the falling edge of TCK. The TMS input is sampled ...

Page 25

TDI TMS TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded ...

Page 26

Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in ...

Page 27

SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into ...

Page 28

JTAG TAP Instruction Set Summary Instruction Code EXTEST 000 Places the Boundary Scan Register between TDI and TDO. IDCODE 001 Preloads ID Register and places it between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between ...

Page 29

JTAG Port Recommended Operating Conditions and DC Characteristics (1.8/2.5 V Version) Parameter 1.8 V Test Port Input Low Voltage 2.5 V Test Port Input Low Voltage 1.8 V Test Port Input High Voltage 2.5 V Test Port Input High Voltage ...

Page 30

... TCK TDI TMS TDO Parallel SRAM input JTAG Port AC Electrical Characteristics Parameter Symbol TCK Cycle Time tTKC TCK Low to TDO Valid tTKQ TCK High Pulse Width tTKH TCK Low Pulse Width tTKL TDI & TMS Set Up Time tTS TDI & TMS Hold Time ...

Page 31

Body, 1.0 mm Bump Pitch Bump Array A aaa e Symbol Min Typ A — — A1 0.40 0.50 ∅b 0.50 0.60 c 0.31 0.36 D 21.9 22.0 Rev 1.0 Rev: 1.03 ...

Page 32

Package Dimensions—119-Bump FPBGA (Package B, Variation 2 A1 TOP VIEW SEATING PLANE C Rev: 1.03 6/2006 ...

Page 33

... GS864236GB-200V Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864218B-167IVB. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 34

... GS864272GC-167IV Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864218B-167IVB. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 35

... Sync SRAM Data Sheet Revision History DS/DateRev. Code: Old; New 8642Vxx_r1 8642Vxx_r1; 8642Vxx_r1_01 8642Vxx_r1_01; 8642Vxx_r1_02 8642Vxx_r1; 8642xx_V_r_01 Rev: 1.03 6/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Types of Changes Format or Content • Creation of new datasheet • ...

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