GS82032AGT-100 GSI [GSI Technology], GS82032AGT-100 Datasheet

GS82032AGT-100

Manufacturer Part Number

GS82032AGT-100

Description

64K x 32 2Mb Synchronous Burst SRAM

Manufacturer

GSI [GSI Technology]

Datasheet

1.GS82032AGT-100.pdf (22 pages)

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TQFP

Commercial Temp

Industrial Temp

Features

• FT pin for user-configurable flow through or pipelined opera-

• Single Cycle Deselect (SCD) operation

• 3.3 V +10%/–5% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipelined mode

• Byte Write (BW) and/or Global Write (GW) operation

• Common data inputs and data outputs

• Clock Control, registered, address, data, and control

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC standard 100-lead TQFP package

• Pb-Free 100-lead TQFP package available

Functional Description

Applications

The GS82032A is a 2,097,152-bit high performance

synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache

applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications,

ranging from DSP main store to networking chip set support.

Controls

Addresses, data I/Os, chip enables (E

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

Rev: 1.12 10/2004

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

tion

Through

Pipeline

3-1-1-1

2-1-1-1

Flow

tCycle

2Mb Synchronous Burst SRAM

, E

155 mA

100 mA

5.5 ns

3.2 ns

9.1 ns

), address burst

-180

8 ns

Parameter Synopsis

140 mA

90 mA

3.5 ns

8.5 ns

10 ns

-166

6 ns

1/22

64K x 32

130 mA

10.5 ns

85 mA

6.6 ns

3.8 ns

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Flow Through/Pipeline Reads

The function of the Data Output Register can be controlled by

the user via the FT mode pin (Pin 14 in the TQFP). Holding

the FT mode pin low places the RAM in Flow Through mode,

causing output data to bypass the Data Output Register.

Holding FT high places the RAM in Pipelined mode,

activating the rising-edge-triggered Data Output Register.

SCD Pipelined Reads

The GS82032A is an SCD (Single Cycle Deselect) pipelined

synchronous SRAM. DCD (Dual Cycle Deselect) versions are

also available. SCD SRAMs pipeline deselect commands one

stage less than read commands. SCD RAMs begin turning off

their outputs immediately after the deselect command has been

captured in the input registers.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS82032A operates on a 3.3 V power supply and all

inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate

output power (V

from the internal circuit.

-150

9 ns

GS82032AT-180/166/150/133/100/66/4/5/6

-133 (-4)

115 mA

80 mA

7.5 ns

12 ns

10 ns

4 ns

DDQ

-100 (-5)

) pins are used to decouple output noise

90 mA

65 mA

10 ns

15 ns

12 ns

5 ns

-66 (-6)

12.5 ns

65 mA

50 mA

20 ns

18 ns

6 ns

3.3 V and 2.5 V I/O

180 MHz–66 MHz

3.3 V V

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