GS864418 GSI [GSI Technology], GS864418 Datasheet

no-image

GS864418

Manufacturer Part Number
GS864418
Description
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
119-, 165-, & 209-Pin BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-, 165-, and 209-bump BGA package
Functional Description
Applications
The GS864418/36/72 is a
synchronous SRAM with a 2-bit burst address counter. Although of a
type originally developed for Level 2 Cache applications supporting
high performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main store to
networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control inputs
(ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive-edge-triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Rev: 1.03 11/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
75,497,472
-bit high performance
Through
Pipeline
3-1-1-1
2-1-1-1
Flow
72Mb S/DCD Sync Burst SRAMs
t
4M x 18, 2M x 36, 1M x 72
KQ
Curr (x18)
Curr (x36)
Curr (x72)
Curr (x18)
Curr (x36)
Curr (x72)
t
KQ
tCycle
tCycle
(x18/x36)
t
(x72)
KQ
Parameter Synopsis
1/41
-250 -225 -200 -166 -150 -133 Unit
385
450
540
265
290
345
2.5
3.0
4.0
6.5
6.5
360
415
505
265
290
345
2.7
3.0
4.4
6.5
6.5
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the user
via the FT mode . Holding the FT mode pin low places the RAM in
Flow Through mode, causing output data to bypass the Data Output
Register. Holding FT high places the RAM in Pipeline mode,
activating the rising-edge-triggered Data Output Register.
SCD and DCD Pipelined Reads
The GS864418/36/72 is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD SRAMs
pipeline disable commands to the same degree as read commands.
SCD SRAMs pipeline deselect commands one stage less than read
commands. SCD RAMs begin turning off their outputs immediately
after the deselect command has been captured in the input registers.
DCD RAMs hold the deselect command for one full cycle and then
begin turning off their outputs just after the second rising edge of
clock. The user may configure this SRAM for either mode of
operation using the SCD mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable (BW)
input combined with one or more individual byte write signals (Bx).
In addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low) for
multi-drop bus applications and normal drive strength (ZQ floating or
high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Core and Interface Voltages
The GS864418/36/72 operates on a 2.5 V or 3.3 V power supply. All
input are 3.3 V and 2.5 V compatible. Separate output power (V
pins are used to decouple output noise from the internal circuits and
are 3.3 V and 2.5 V compatible.
335
385
460
265
290
345
GS864418(B/E)/GS864436(B/E)/GS864472(C)
3.0
3.0
5.0
6.5
6.5
305
345
405
255
280
335
3.5
3.5
6.0
7.0
7.0
295
325
385
240
265
315
3.8
3.8
6.7
7.5
7.5
265
295
345
225
245
300
4.0
4.0
7.5
8.5
8.5
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
ns
Product Preview
© 2003, GSI Technology
250 MHz–133MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DDQ
DD
)

Related parts for GS864418

GS864418 Summary of contents

Page 1

... ZZ signal stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS864418/36/72 operates 3.3 V power supply. All input are 3.3 V and 2.5 V compatible. Separate output power (V pins are used to decouple output noise from the internal circuits and are 3 ...

Page 2

... TMS D D Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472( ADSP ADSC ADV ...

Page 3

... SCD I I MCH Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Description Address field LSBs and Address Counter Preset Inputs. Address Inputs Data Input and Output pins Byte Write Enable for I/Os ...

Page 4

... V I DDQ Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Description Must Connect Low Byte Enable; active low FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low Drive]) ...

Page 5

... SCD V DDQ LBO Bump BGA— Body—1.0 mm Bump Pitch Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472( ADSC ...

Page 6

... SCD V DDQ LBO Bump BGA— Body—1.0 mm Bump Pitch Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472( ADSC ...

Page 7

... GS864418/36 165-Bump BGA Pin Description Symbol Type I — ADV I ADSC, ADSP LBO I FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low ...

Page 8

... V M DDQ DDQ Bump BGA— Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472( ADSP ADSC ...

Page 9

... GS864418B Pad Out—119-Bump BGA—Top View (Package DDQ DDQ DDQ DDQ DDQ Bump BGA— Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. ...

Page 10

... GS864418/36 119-Bump BGA Pin Description Symbol Type I — ADV I ADSP, ADSC LBO I FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low ...

Page 11

... Power Down ZZ Control Note: Only x36 version shown for simplicity. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) GS864418/36/72 Block Diagram Counter Load Register D Q Register ...

Page 12

... Note: The burst counter wraps to initial state on the 5th clock. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Pin Name State L LBO ...

Page 13

... All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. 4. Bytes “ ” and “ ” are only available on the x36 version Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472( ...

Page 14

... Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. 6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) State Diagram E 1 ...

Page 15

... The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and assumes ADSP is tied high and ADV is tied low. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Simplified State Diagram X Deselect ...

Page 16

... Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Simplified State Diagram with G X Deselect ...

Page 17

... Input Under/overshoot voltage must be –2 V > Vi < V Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Description Voltage on V Pins DD ...

Page 18

... Input Under/overshoot voltage must be –2 V > Vi < V Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Symbol Min. Typ. V 2.0 — ...

Page 19

... Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Overshoot Measurement and Timing 50% ...

Page 20

... ZZ Input Current FT, SCD, and ZQ Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Symbol Test Conditions ≥ ...

Page 21

... Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) 21/41 Product Preview © 2003, GSI Technology ...

Page 22

... asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) -250 -225 Min ...

Page 23

... tOE DQa–DQd Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Pipeline Mode Timing (SCD) Cont Deselect Write B Read C Single Write Single Write tKL tKL tKH tKH tKC ...

Page 24

... tOE DQa–DQd Q(A) Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Flow Through Mode Timing (SCD) Cont Write B Read C Read C+1 Read C+2 Read C+3 Read C tKL tKL tKC tKC Fixed High ...

Page 25

... tOE DQa–DQd Hi-Z Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Pipeline Mode Timing (DCD) Deselect Deselect Write B Read C Read C+1 Read C+2 Read C+3 Cont tKL tKL tKH tKH tKC tKC ...

Page 26

... SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Flow Through Mode Timing (DCD) Deselect Write B Read C ...

Page 27

... TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG Port unused, TCK, TDI, and TMS may be left floating or tied to either V Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Sleep Mode Timing Diagram tKH tKH ...

Page 28

... Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z, SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Description 28/41 Product Preview ...

Page 29

... x16 Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) JTAG TAP Block Diagram (2-die module) · · · · · · TDO TDI Not Used ...

Page 30

... TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili- tate testing of other devices in the scan path. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) JTAG Tap Controller State Diagram 1 1 ...

Page 31

... Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR state. RFU These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) 31/41 Product Preview © 2003, GSI Technology ...

Page 32

... Places Bypass Register between TDI and TDO. Notes: 1. Instruction codes expressed in binary, MSB on left, LSB on right. 2. Default instruction automatically loaded at power-up and in test-logic-reset state. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Conditions V – V/ns ...

Page 33

... OLJ –100 uA OHJC +100 uA OHJC TCK TDI TMS TDO Parallel SRAM input Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Symbol V IHJ3 V ILJ3 V IHJ2 V ILJ2 I INHJ I INLJ I OLJ V ...

Page 34

... For information regarding the Boundary Scan Chain obtain BSDL files for this part, please contact our Applications Engineering Department at: apps@gsitechnology.com. Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Min Max Unit 50 — ...

Page 35

... Symbol Min Typ A — — A1 0.40 0.50 ∅b 0.50 0.60 c 0.31 0.36 D 21.9 22.0 Rev 1.0 Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) 209 BGA Package Drawing (Package ∅b e Max Units Symbol 22.1 mm ...

Page 36

... SEATING PLANE C Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) BOTTOM VIEW A1 Ø0. Ø0. Ø0.60~0.90 (119x 7.62 14±0. ...

Page 37

... SEATING PLANE C Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) BOTTOM VIEW Ø0. Ø0. Ø0.44~0.64(165x 1.0 10.0 15±0. ...

Page 38

... GS864436E-133 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418B-150IB. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 39

... GS864436E-225I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418B-150IB. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 40

... GS864472C-133I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418B-150IB. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 41

... Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS864418(B/E)/GS864436(B/E)/GS864472(C) Types of Changes Format or Content • Creation of new datasheet • Updated Operating Currents table Content • Updated FT AC Characteristics for tKQ • ...

Related keywords