GS832118E GSI [GSI Technology], GS832118E Datasheet

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GS832118E

Manufacturer Part Number
GS832118E
Description
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
165-Bump FP-BGA
Commercial Temp
Industrial Temp
Features
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 165-bump FP-BGA package
• Pb-Free 165-bump BGA package available
Functional Description
Applications
The GS832118/32/36E is a 37,748,736-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx,
BW, GW) are synchronous and are controlled by a positive-
edge-triggered clock input (CK). Output enable (G) and power
down control (ZZ) are asynchronous inputs. Burst cycles can
be initiated with either ADSP or ADSC inputs. In Burst mode,
subsequent burst addresses are generated internally and are
controlled by ADV. The burst address counter may be
configured to count in either linear or interleave order with the
Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Rev: 1.03 4/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Through
Pipeline
3-1-1-1
2-1-1-1
Flow
2M x 18, 1M x 32, 1M x 36
36Mb Sync Burst SRAMs
Curr
Curr
Curr
Curr
tCycle
tCycle
t
t
(x32/x36)
(x32/x36)
KQ
KQ
(x18)
(x18)
Parameter Synopsis
1/32
-250 -225 -200 -166 -150 -133 Unit
285
350
205
235
2.5
4.0
6.5
6.5
265
320
195
225
2.7
4.4
7.0
7.0
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
SCD Pipelined Reads
The GS832118/32/36E is a SCD (Single Cycle Deselect)
pipelined synchronous SRAM. DCD (Dual Cycle Deselect)
versions are also available. SCD SRAMs pipeline deselect
commands one stage less than read commands. SCD RAMs
begin turning off their outputs immediately after the deselect
command has been captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS832118/32/36E operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
from the internal circuits and are 3.3 V and 2.5 V compatible.
245
295
185
210
3.0
5.0
7.5
7.5
GS832118/32/36E-250/225/200/166/150/133
220
260
175
200
3.5
6.0
8.0
8.0
210
240
165
190
3.8
6.6
8.5
8.5
DDQ
185
215
155
175
4.0
7.5
8.5
8.5
) pins are used to decouple output noise
mA
mA
mA
mA
ns
ns
ns
ns
© 2003, GSI Technology
250 MHz–133 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DD

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GS832118E Summary of contents

Page 1

... Pb-Free 165-bump BGA package available Functional Description Applications The GS832118/32/36E is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support ...

Page 2

Bump BGA—x18 Commom I/O—Top View (Package DDQ D NC DQB V DDQ E NC DQB V DDQ F NC DQB V DDQ G ...

Page 3

Bump BGA—x32 Common I/O—Top View (Package DDQ D DQC DQC V DDQ E DQC DQC V DDQ F DQC DQC V DDQ G ...

Page 4

Bump BGA—x36 Common I/O—Top View (Package DQPC NC V DDQ D DQC DQC V DDQ E DQC DQC V DDQ F DQC DQC V DDQ G ...

Page 5

GS832118/32/36E 165-Bump BGA Pin Description Symbol Type I — ...

Page 6

Register – LBO ADV CK ADSC ADSP Power Down ZZ Control Note: Only x36 version shown for simplicity. Rev: 1.03 ...

Page 7

Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Note: There are pull-up devices on the FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the ...

Page 8

Byte Write Truth Table Function GW Read H Read H Write byte a H Write byte b H Write byte c H Write byte d H Write all bytes H Write all bytes L Notes: 1. All byte outputs are ...

Page 9

Synchronous Truth Table Operation Address Used Deselect Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, ...

Page 10

Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B that ADSP is tied ...

Page 11

Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles ...

Page 12

Absolute Maximum Ratings (All voltages reference Symbol Voltage in V DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O ...

Page 13

V Range Logic Levels DDQ3 Parameter V Input High Voltage DD V Input Low Voltage DD V I/O Input High Voltage DDQ V I/O Input Low Voltage DDQ Notes: 1. The part numbers of Industrial Temperature Range versions end the ...

Page 14

Undershoot Measurement and Timing 50% V – 2 20% tKC Capacitance 2 Parameter Input Capacitance Input/Output Capacitance Note: ...

Page 15

DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) ZZ Input Current FT, SCD, ZQInput Current Output Leakage Current (x36/x72) Output Leakage Current (x18) Output High Voltage Output High Voltage Output Low Voltage Rev: 1.03 4/2005 Specifications cited are ...

Page 16

Rev: 1.03 4/2005 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS832118/32/36E-250/225/200/166/150/133 16/32 © 2003, GSI Technology ...

Page 17

AC Electrical Characteristics Parameter Symbol Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock ...

Page 18

Begin Read A Cont Single Read Single Read CK ADSP tS tH ADSC tS ADV tS tH A0– Ba– tOE DQa–DQd Rev: 1.03 4/2005 Specifications cited ...

Page 19

Begin Read A Cont tKH tKH CK ADSP tS tH ADSC tS tH ADV tS tH A0– Ba– and E3 only sampled with ADSC tOE ...

Page 20

... During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. ...

Page 21

JTAG Pin Descriptions Pin Pin Name I/O Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate TCK Test Clock In from the falling edge of TCK. The TMS input is sampled ...

Page 22

TDI TMS TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded ...

Page 23

Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in ...

Page 24

SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into ...

Page 25

JTAG TAP Instruction Set Summary Instruction Code EXTEST 000 Places the Boundary Scan Register between TDI and TDO. IDCODE 001 Preloads ID Register and places it between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between ...

Page 26

JTAG Port Recommended Operating Conditions and DC Characteristics Parameter 3.3 V Test Port Input High Voltage 3.3 V Test Port Input Low Voltage 2.5 V Test Port Input High Voltage 2.5 V Test Port Input Low Voltage TMS, TCK and ...

Page 27

... TCK TDI TMS TDO Parallel SRAM input JTAG Port AC Electrical Characteristics Parameter Symbol TCK Cycle Time tTKC TCK Low to TDO Valid tTKQ TCK High Pulse Width tTKH TCK Low Pulse Width tTKL TDI & TMS Set Up Time tTS TDI & TMS Hold Time ...

Page 28

Package Dimensions—165-Bump FPBGA (Package E; Variation 1) A1 TOP VIEW SEATING PLANE C ...

Page 29

... GS832118E-150I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832118E-166IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 30

... GS832132GE-133 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832118E-166IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 31

... GS832136GE-133I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832118E-166IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 32

... Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 8321xx_r1 8321xx_r1; 8321xx_r1_01 8321xx_r1_01; 8321xx_r1_02 8321xx_r1_02; 8321xx_r1_03 Rev: 1.03 4/2005 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS832118/32/36E-250/225/200/166/150/133 • Creation of new datasheet • ...

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