GS880Z18BGT-300I GSI [GSI Technology], GS880Z18BGT-300I Datasheet

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GS880Z18BGT-300I

Manufacturer Part Number
GS880Z18BGT-300I
Description
9Mb Pipelined and Flow Through Synchronous NBT SRAM
Manufacturer
GSI [GSI Technology]
Datasheet
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available
Functional Description
The GS880Z18/36BT is a 9Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
Rev: 1.02 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
Flow Through
Pipeline
3-1-1-1
2-1-1-1
9Mb Pipelined and Flow Through
Curr (x32/x36)
Curr (x32/x36)
Curr (x18)
Curr (x18)
Synchronous NBT SRAM
tCycle
tCycle
t
t
KQ
KQ
Paramter Synopsis
1/24
-333
250
290
200
230
2.5
3.0
4.5
4.5
-300
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS880Z18/36BT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS880Z18/36BT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
Standard 100-pin TQFP package.
230
265
185
210
2.5
3.3
5.0
5.0
-250
200
230
160
185
2.5
4.0
5.5
5.5
GS880Z18/36BT-333/300/250/200/150
-200
170
195
140
160
3.0
5.0
6.5
6.5
-150
140
160
128
145
3.8
6.7
7.5
7.5
Unit
mA
mA
mA
mA
ns
ns
ns
ns
© 2001, GSI Technology
333 MHz–150 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DD

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GS880Z18BGT-300I Summary of contents

Page 1

... For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock ...

Page 2

DDQ ...

Page 3

DQP DDQ ...

Page 4

TQFP Pin Descriptions Symbol Type ...

Page 5

... GS880Z18/36B NBT SRAM Functional Block Diagram Rev: 1.02 10/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS880Z18/36BT-333/300/250/200/150 Amps Sense Drivers Write 5/24 © 2001, GSI Technology ...

Page 6

... A B cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock ...

Page 7

... Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. ...

Page 8

Pipeline and Flow Through Read Write Control State Diagram New Read R R Burst Read B Key Input Command Code ƒ Transition Current State (n) Next State (n+1) n Clock (CK) Command Current State Current State and Next State Definition ...

Page 9

Intermediate B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Intermediate State (N+1) Clock (CK) Command Current State and Next State Definition for Rev: 1.02 10/2004 Specifications cited are subject to change without notice. ...

Page 10

B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Clock (CK) Command Current State and Next State Definition for: Rev: 1.02 10/2004 Specifications cited are subject to change without notice. For latest documentation see ...

Page 11

... SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode ...

Page 12

... During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. ...

Page 13

Absolute Maximum Ratings (All voltages reference Symbol DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O Pin OUT P ...

Page 14

V Range Logic Levels DDQ3 Parameter V Input High Voltage DD V Input Low Voltage DD V I/O Input High Voltage DDQ V I/O Input Low Voltage DDQ Notes: 1. The part numbers of Industrial Temperature Range versions end the ...

Page 15

Undershoot Measurement and Timing 50% V – 2 50% tKC Capacitance 2 Parameter Input Capacitance Input/Output Capacitance Note: ...

Page 16

DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) ZZ Input Current FT, SCD, ZQ Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage Rev: 1.02 10/2004 Specifications cited are subject to change without ...

Page 17

Operating Currents Parameter Test Conditions (x32/ x36) Device Selected; All other inputs Operating ≥V or ≤ V Current IH IL Output open (x18) Standby ZZ ≥ V – 0.2 V — DD Current Device Deselected; Deselect All other inputs — ...

Page 18

AC Electrical Characteristics Parameter Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock to ...

Page 19

Write A Write CKE ADV A0– DQa–DQd G *Note: E=High(False ...

Page 20

Write A Write CKE ADV A0– D(A) G *Note High(False ...

Page 21

TQFP Package Drawing (Package T) Symbol Description Min. Nom. Max A1 Standoff 0.05 A2 Body Thickness 1.35 b Lead Width 0.20 c Lead Thickness 0.09 D Terminal Dimension 21.9 D1 Package Body 19.9 E Terminal Dimension 15.9 E1 Package Body ...

Page 22

... GS880Z36BT-200I 256K x 36 GS880Z36BT-150I 512K x 18 GS880Z18BGT-333 512K x 18 GS880Z18BGT-300 512K x 18 GS880Z18BGT-250 512K x 18 GS880Z18BGT-200 512K x 18 GS880Z18BGT-150 256K x 36 GS880Z36BGT-333 256K x 36 GS880Z36BGT-300 256K x 36 GS880Z36BGT-250 256K x 36 GS880Z36BGT-200 256K x 36 GS880Z36BGT-150 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: Gs880Z18BT-150IT. ...

Page 23

... Ordering Information—GSI NBT Synchronous SRAM 1 Org Part Number 512K x 18 GS880Z18BGT-333I 512K x 18 GS880Z18BGT-300I 512K x 18 GS880Z18BGT-250I 512K x 18 GS880Z18BGT-200I 512K x 18 GS880Z18BGT-150I 256K x 36 GS880Z36BGT-333I 256K x 36 GS880Z36BGT-300I 256K x 36 GS880Z36BGT-250I 256K x 36 GS880Z36BGT-200I 256K x 36 GS880Z36BGT-150I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: Gs880Z18BT-150IT. ...

Page 24

... Sync SRAM Data Sheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 880Z18B_r1 880Z18B_r1; 880Z18B_r1_01 880Z18B_r1_01; 880Z18B_r1_02 Rev: 1.02 10/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Page;Revisions;Reason • Creation of new datasheet • Removed address and DQ number designations • ...

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