GS8321E32E-166IV GSI [GSI Technology], GS8321E32E-166IV Datasheet - Page 13

• Manufacturer Part Number: GS8321E32E-166IV
• Description: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
• Manufacturer: GSI [GSI Technology]

V
Recommended Operating Temperatures
Capacitance
(T
Note:
These parameters are sample tested.
Rev: 1.04 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
Notes:
1.
2.
V
Ambient Temperature (Commercial Range Versions)
DDQ2
SS
A
Ambient Temperature (Industrial Range Versions)
– 2.0 V
Undershoot Measurement and Timing
= 25
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
50%
V
V
Input/Output Capacitance
SS
IH
& V
o
Input Capacitance
C, f = 1 MH
DDQ1
Parameter
V
V
DD
DD
Range Logic Levels
Input High Voltage
Input Low Voltage
Parameter
Parameter
Z
20% tKC
, V
DD
= 2.5 V)
Symbol
C
C
I/O
IN
Symbol
Symbol
DDn
DDn
V
V
T
T
13/31
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
IH
IL
A
A
Test conditions
V
V
OUT
IN
0.6*V
Min.
Min.
–0.3
= 0 V
–40
= 0 V
0
DD
V
DD
+ 2.0 V
Overshoot Measurement and Timing
50%
V
V
DD
IL
Typ.
Typ.
—
—
25
25
Typ.
4
6
V
0.3*V
DD
Max.
Max.
70
85
20% tKC
+ 0.3
Max.
DD
GS8321E18/32/36E-xxxV
5
7
Unit
Unit
Unit
°C
°C
V
V
© 2003, GSI Technology
pF
pF
Notes
Notes
1
1
2
2