EDD1216AASE ELPIDA [Elpida Memory], EDD1216AASE Datasheet - Page 36

• Manufacturer Part Number: EDD1216AASE
• Description: 128M bits DDR SDRAM (8M words x 16 bits)
• Manufacturer: ELPIDA [Elpida Memory]

READ to PRECHARGE Command Interval (same bank): To stop output data
A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z tHZP
(= CL) after the precharge command.
Preliminary Data Sheet E0614E20 (Ver. 2.0)
Command
Command
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2.5, BL = 2, 4, 8)
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 2, 4, 8)
DQS
DQS
/CK
DQ
/CK
CK
DQ
CK
t0
t0
NOP
NOP
t1
t1
READ
READ
t2
t2
PRE/PALL
PRE/PALL
CL = 2.5
t3
t3
tHZP
36
t4
t4
out0 out1
tHZP
out0 out1
t5
t5
t6
t6
NOP
NOP
High-Z
High-Z
t7
t7
High-Z
High-Z
EDD1216AASE
t8
t8