MRF9030MR1_07 FREESCALE [Freescale Semiconductor, Inc], MRF9030MR1_07 Datasheet

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MRF9030MR1_07

Manufacturer Part Number
MRF9030MR1_07
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
• 200_C Capable Plastic Package
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
Output Power
Mount.
13 inch Reel.
13 inch Reel.
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free terminations.
Test Methodology
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9030MR1
MRF9030MBR1
Rating
3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
Package Peak Temperature
CASE 1337 - 03, STYLE 1
CASE 1265 - 08, STYLE 1
MRF9030MBR1
MRF9030MBR1
MRF9030MR1
MRF9030MR1
TO - 272- 2
LATERAL N - CHANNEL
PLASTIC
TO - 270- 2
RF POWER MOSFETs
PLASTIC
945 MHz, 30 W, 26 V
MRF9030MR1 MRF9030MBR1
M2 (Minimum)
C7 (Minimum)
C6 (Minimum)
260
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, +65
- 0.5, + 15
Class
Value
Value
0.93
1.08
139
200
Rev. 9, 5/2006
MRF9030M
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Unit
°C
°C
W
°C
1

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MRF9030MR1_07 Summary of contents

Page 1

Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - ...

Page 2

Table 5. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero Gate Voltage Drain Leakage Current ( Vdc Vdc ...

Page 3

INPUT 0.260″ x 0.060″ Microstrip Z2 0.240″ x 0.060″ Microstrip Z3 0.500″ x 0.100″ Microstrip Z4 0.200″ x 0.270″ Microstrip Z5 0.330″ x 0.270″ ...

Page 4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on ...

Page 5

Figure 4. Class AB Broadband Circuit Performance 21 375 mA DQ 20.5 300 mA 20 250 mA 19.5 V 200 945 MHz f2 ...

Page 6

Figure 9. Power Gain, Efficiency and IMD MRF9030MR1 MRF9030MBR1 Vdc η 250 945 MHz f2 = 945.1 MHz IMD ...

Page 7

MHz Figure 10. Series Equivalent Source and Load Impedance (MRF9030MR1) RF Device Data Freescale Semiconductor = 5 Ω source Z load f = 960 MHz f = 960 MHz f = 930 MHz V ...

Page 8

Figure 11. Series Equivalent Source and Load Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 Ω load source f = 960 MHz f = 960 MHz f = 930 MHz f = 930 MHz ...

Page 9

RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 9 ...

Page 10

MRF9030MR1 MRF9030MBR1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 11 ...

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MRF9030MR1 MRF9030MBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF9030MR1 MRF9030MBR1 13 ...

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MRF9030MR1 MRF9030MBR1 14 RF Device Data Freescale Semiconductor ...

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aaa GATE LEAD aaa ZONE "J" c1 DATUM H PLANE Device Data Freescale Semiconductor A E1 DRAIN LEAD ...

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How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

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