MRF9030MR1_07 FREESCALE [Freescale Semiconductor, Inc], MRF9030MR1_07 Datasheet

MRF9030MR1_07

Manufacturer Part Number

MRF9030MR1_07

Description

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF9030MR1_07.pdf (16 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applications

in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts

• Integrated ESD Protection

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface

• 200_C Capable Plastic Package

• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Table 3. ESD Protection Characteristics

Table 4. Moisture Sensitivity Level

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Charge Device Model

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

Designed for broadband commercial and industrial applications with frequen-

Output Power

Mount.

13 inch Reel.

Derate above 25°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 30 Watts PEP

Power Gain — 20 dB

Efficiency — 41% (Two Tones)

IMD — - 31 dBc

Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part

replacement. N suffix added to part number to indicate transition to lead - free terminations.

Test Methodology

= 25°C

Test Conditions

Characteristic

Rating

MRF9030MR1

MRF9030MBR1

Rating

Symbol

DSS

θJC

stg

Package Peak Temperature

CASE 1337 - 03, STYLE 1

CASE 1265 - 08, STYLE 1

MRF9030MBR1

MRF9030MR1

TO - 272- 2

LATERAL N - CHANNEL

PLASTIC

TO - 270- 2

RF POWER MOSFETs

PLASTIC

945 MHz, 30 W, 26 V

MRF9030MR1 MRF9030MBR1

M2 (Minimum)

C7 (Minimum)

C6 (Minimum)

260

1 (Minimum)

- 65 to +150

BROADBAND

- 0.5, +65

- 0.5, + 15

Class

Value

0.93

1.08

139

200

Rev. 9, 5/2006

MRF9030M

W/°C

°C/W

Unit

Vdc

Unit

°C

Related parts for MRF9030MR1_07

MRF9030MR1_07 Summary of contents

Page 1

Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - ...

Page 2

Table 5. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc Vdc Zero Gate Voltage Drain Leakage Current ( Vdc Vdc ...

Page 3

INPUT 0.260″ x 0.060″ Microstrip Z2 0.240″ x 0.060″ Microstrip Z3 0.500″ x 0.100″ Microstrip Z4 0.200″ x 0.270″ Microstrip Z5 0.330″ x 0.270″ ...

Page 4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on ...

Page 5

Figure 4. Class AB Broadband Circuit Performance 21 375 mA DQ 20.5 300 mA 20 250 mA 19.5 V 200 945 MHz f2 ...

Page 6

Figure 9. Power Gain, Efficiency and IMD MRF9030MR1 MRF9030MBR1 Vdc η 250 945 MHz f2 = 945.1 MHz IMD ...

Page 7

MHz Figure 10. Series Equivalent Source and Load Impedance (MRF9030MR1) RF Device Data Freescale Semiconductor = 5 Ω source Z load f = 960 MHz f = 960 MHz f = 930 MHz V ...

Page 8

Figure 11. Series Equivalent Source and Load Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 Ω load source f = 960 MHz f = 960 MHz f = 930 MHz f = 930 MHz ...

Page 9

RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 9 ...

Page 10

MRF9030MR1 MRF9030MBR1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 11 ...

Page 12

MRF9030MR1 MRF9030MBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

RF Device Data Freescale Semiconductor MRF9030MR1 MRF9030MBR1 13 ...

Page 14

MRF9030MR1 MRF9030MBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

aaa GATE LEAD aaa ZONE "J" c1 DATUM H PLANE Device Data Freescale Semiconductor A E1 DRAIN LEAD ...

Page 16

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 480- 768- ...

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