APT8015JVFR_05 ADPOW [Advanced Power Technology], APT8015JVFR_05 Datasheet - Page 3

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APT8015JVFR_05

Manufacturer Part Number
APT8015JVFR_05
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer
ADPOW [Advanced Power Technology]
Datasheet
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
100
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
50
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT8015JVFR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
-25
T
250µSEC. PULSE TEST
V
GS
J
V GS =6.5V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE (°C)
50
C
= 10V
D
T J = +125°C
100
, CASE TEMPERATURE (°C)
[Cont.]
2
0
T J = +25°C
25
75
200
50
4
100
75
300
100 125 150
T J = -55°C
6
125
5.5V
4.5V
5V
6V
150
400
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
, JUNCTION TEMPERATURE (°C)
T
= 10V @ 0.5 I
NORMALIZED TO
, DRAIN CURRENT (AMPERES)
20
V GS =6.5V,7V,10V & 15V
C
V GS =10V
3
, CASE TEMPERATURE (°C)
0
0
DS
25
25
40
(ON) vs DRAIN CURRENT
6
D
[Cont.]
50
50
60
9
75
75 100 125 150
V GS =20V
100 125 150
5.5V
4.5V
12
80
5V
6V
100
15

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