APT8015JVFR_05 ADPOW [Advanced Power Technology], APT8015JVFR_05 Datasheet - Page 4

• Manufacturer Part Number: APT8015JVFR_05
• Description: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
• Manufacturer: ADPOW [Advanced Power Technology]

ISOTOP
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
r = 4.0 (.157)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
®
(2 places)
is a Registered Trademark of SGS Thomson.
200
100
50
10
20
16
12
.5
.1
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
V
1
0
DS
I
D
T C =+25°C
T J =+150°C
SINGLE PULSE
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= I
OPERATION HERE
D
Q
[Cont.]
300
g
, TOTAL GATE CHARGE (nC)
5
V DS =250V
10
600
V DS =100V
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
50 100
900
7.8 (.307)
8.2 (.322)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
V DS =400V
Dimensions in Millimeters and (Inches)
1200
SOT-227 (ISOTOP
1500
800
10µS
100µS
1mS
10mS
100mS
DC
3.3 (.129)
3.6 (.143)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
4.0 (.157)
4.2 (.165)
(2 places)
(4 places)
* Source
* Source
®
) Package Outline
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
60,000
10,000
5,000
1,000
500
200
100
50
10
5
1
0.2
.01
V
V
DS
SD
1.95 (.077)
2.14 (.084)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.4
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
.1
T J =+150°C
0.75 (.030)
0.85 (.033)
0.6
Drain
Gate
Hex Nut M4
*
0.8
(4 places)
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
"UL Recognized" File No. E145592
1
APT8015JVFR
1.0
12.6 (.496)
12.8 (.504)
1.2
T J =+25°C
C iss
C oss
C rss
10
1.4
25.2 (0.992)
25.4 (1.000)
1.6
50