PDTC124XT NXP [NXP Semiconductors], PDTC124XT Datasheet - Page 5

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PDTC124XT

Manufacturer Part Number
PDTC124XT
Description
NPN resistor-equipped transistors; R1 = 22 k?, R2 = 47 k?
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PDTC124X_SER_7
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
Symbol
R
Symbol
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
= 25
°
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
C unless otherwise specified.
Parameter
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
Rev. 07 — 16 November 2009
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 °C
= 10 mA; I
Conditions
in free air
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 300 mV; I
= 10 V; I
C
C
C
E
B
B
B
E
= 0 A
= 5 mA
= 100 μA
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
C
e
= 2 mA
= 0 A;
[1][2]
[2][3]
PDTC124X series
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
15.4
Min
-
-
-
-
80
-
2
1.7
-
Typ
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
0.8
1.1
22
2.1
-
© NXP B.V. 2009. All rights reserved.
Max
833
500
500
500
250
500
625
150
28.6
Max
100
1
50
120
-
0.5
-
2.6
2.5
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
Unit
μA
μA
μA
mV
V
V
pF
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