MW4IC915GNBR1_06 FREESCALE [Freescale Semiconductor, Inc], MW4IC915GNBR1_06 Datasheet - Page 9

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MW4IC915GNBR1_06

Manufacturer Part Number
MW4IC915GNBR1_06
Description
RF LDMOS Wideband Integrated Power Amplifiers
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
RF Device Data
Freescale Semiconductor
3.5
2.5
1.5
0.5
34
33
32
31
30
29
28
4
3
2
1
0
860
0.1
V
I
EDGE Modulation
f = 910 MHz
DQ1
DD
Figure 12. Power Gain versus Frequency
Figure 14. Error Vector Magnitude versus
870
= 26 Vdc
= 60 mA, I
880
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD) - CONTINUED
P
T
out
C
DQ2
= −30_C
, OUTPUT POWER (WATTS) AVG.
890
25_C
85_C
= 240 mA
f, FREQUENCY (MHz)
1
Output Power
900
T
C
= 85_C
910
V
P
I
DQ1
DD
out
920
−70
−72
−74
−76
−78
−80
−82
−84
−86
= P1dB
= 26 Vdc
= 60 mA, I
0.1
10
930
V
I
EDGE Modulation
f = 910 MHz
DQ1
DD
Figure 16. Spectral Regrowth at 600 kHz
= 26 Vdc
= 60 mA, I
DQ2
940
−30_C
25_C
= 240 mA
950
DQ2
P
versus Output Power
out
100
, OUTPUT POWER (WATTS)
960
= 240 mA
T
1
C
= −30_C
−50
−55
−60
−65
−70
−75
−80
21
20
19
18
17
860
0.1
10
Figure 13. Power Added Efficiency versus
870
Figure 15. Spectral Regrowth at 400 kHz
85_C
880
25_C
P
890
versus Output Power
out
, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
MW4IC915NBR1 MW4IC915GNBR1
1
100
T
900
Frequency
C
T
25_C
85_C
= −30_C
C
= 85_C
910
V
P
I
DQ1
DD
out
V
I
EDGE Modulation
f = 910 MHz
DQ1
920
DD
= 3 W CW
= 26 Vdc
= 60 mA, I
= 26 Vdc
= 60 mA, I
10
930
DQ2
940
DQ2
= 240 mA
= 240 mA
−30_C
950
25_C
960
100
9

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