GM72V66841ELT-10K HYNIX [Hynix Semiconductor], GM72V66841ELT-10K Datasheet - Page 5

• Manufacturer Part Number: GM72V66841ELT-10K
• Description: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Output leakage current
DC Characteristics (Ta = 0 to 70C, V
(Continued)
Input leakage current
Notes : 1. I
Rev. 1.1/Apr.01
Output high voltage
Output low voltage
Capacitance (Ta = 25C, V
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
Parameter
Input capacitance (CLK)
Input capacitance (Signals)
Output capacitance (DQ)
3. Addresses are changed once per one cycle.
4. Addresses are changed once per two cycles.
6. After Power down mode, no CLK operating current.
2. One bank operation.
7. After self refresh mode set, self refresh current.
8. L-Version.
5. After Power down mode, CLK operating current.
9. Input signals are V
2. DQM = V
3. This parameter is sampled and not 100% tested.
4. Measured with 1.4 V bias and 200mV swing at the pin under measurement.
output open condition.
CC
depends on output load condition when the device is selected. I
Parameter
Symbol
I H
V
V
I
to disable Dout.
I
LO
LI
OH
OL
I H
or V
CC
IL
, V
fixed.
CCQ
Min
-1.5
2.4
-1
-
- 7, - 75, - 8, - 7K, - 7J
Symbol
= 3.3 V +/-0.3 V)
CC
C
C
C
I1
I2
O
, V
CCQ
= 3.3 V +/- 0.3 V, V
Min.
2.5
2.5
4.0
Max
1.5
0.4
1
-
Max.
6.5
4
5
CC (
Unit Test conditions Notes
max) is specified at the
uA
uA
V
V
SS
GM72V66841ET/ELT
, V
0 <=Vin <=V
0<=Vout<=V
DQ = disable
I
I
Unit
SSQ
OH
OL
pF
pF
pF
=2 mA
= -2 mA
= 0 V)
1, 2, 3, 4
Notes
1, 3, 4
1, 3, 4
CC
CC
-5-