GM72V66841ELT-10K HYNIX [Hynix Semiconductor], GM72V66841ELT-10K Datasheet - Page 8

• Manufacturer Part Number: GM72V66841ELT-10K
• Description: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 1.1/Apr.01
Relationship Between Frequency and Minimum Latency
Parameter
frequency(MHz)
t
Active command to column
command (same bank)
Active command to active
command (same bank)
Active command to Precharge
command (same bank)
Precharge command to active
command (same bank)
Write recovery or last data-in to
Precharge command
Active command to active
command (different bank)
Self refresh exit time
Last data in to active command
(Auto Precharge, same bank)
Self refresh exit to command
input
Precharge
command to
high impedance
Last data out to active
command
(auto Precharge) (same bank)
Last data out to
Precharge
(early Precharge)
Column command to column
command
Write command to data in
latency
DQM to data in
DQM to data out
CKE to CLK disable
Register set to active command
CS to command disable
Power down exit to command
input
CK
(ns)
(same bank)
(CL=2)
(CL=3)
(CL=2)
(CL=3)
Symbol
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
SREX
l
l
RWL
APW
WCD
DOD
CDD
RCD
RAS
RRD
HZP
HZP
APR
CCD
CLE
RSA
SEC
DID
PEC
RC
RP
EP
EP
143
-2
7
3
9
6
3
1
2
1
4
9
3
1
1
0
0
2
1
1
0
1
-
-
-7
100
10
-1
-2
2
7
5
2
1
2
1
3
7
2
3
1
1
0
0
2
1
1
0
1
133
7.5
-2
3
9
6
3
1
2
1
4
9
3
1
1
0
0
2
1
1
0
1
-
-
-75
100
10
-1
-2
2
7
5
2
1
2
1
3
7
2
3
1
1
0
0
2
1
1
0
1
125
-2
8
3
9
6
3
1
2
1
4
9
3
1
1
0
0
2
1
1
0
1
-
-
-8
100
10
-1
-2
2
7
5
2
1
2
2
3
7
2
3
1
1
0
0
2
1
1
0
1
100
- 1
- 2
10
2
7
5
2
1
2
1
3
7
2
3
1
1
0
0
2
1
1
0
1
-7K
GM72V66841ET/ELT
100
- 2
10
- 1
2
7
5
2
1
2
1
3
7
2
3
1
1
0
0
2
1
1
0
1
100
10
- 2
2
7
5
2
1
2
1
3
7
3
1
1
0
0
2
1
1
0
1
-
-
-7J
66
15
- 2
-1
2
6
4
2
1
2
2
3
6
2
3
1
1
0
0
2
1
1
0
1
+
+
= [
= [
= [
Notes
l
l
RP
RP
1
l
1
l
1
1
1
l
RWL
RAS
], 1
], 1
RC
-8-
]