GM72V66841ELT-10K HYNIX [Hynix Semiconductor], GM72V66841ELT-10K Datasheet - Page 7

• Manufacturer Part Number: GM72V66841ELT-10K
• Description: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev. 1.1/Apr.01
Write recovery or data-in
to precharge lead time
Active (a) to Active (b)
command period
Refresh period
AC Characteristics (Ta = 0 to 70C, V
(Continued)
Test Condition
• Input and output-timing reference levels: 1.4V
• Input waveform and output load: See following figures
Notes : 1. AC measurement assumes
input
Parameter
2. Access time is measured at 1.40V. Load condition is C
3.
4.
5.
0.4V
2.4V
If
t
t
t
LZ
HZ
CES
t
T
(min)defines the time at which the outputs achieves the low impedance state.
(max)defines the time at which the outputs achieves the high impedance state.
define CKE setup time to CKE rising edge except Power down exit command.
is longer than 1ns,transition time compensation should be considered.
t
T
Symbol
t
t
t
RWL
RRD
REF
Min Max
14
7
-
t
t
- 7
T
T
= 1ns. Reference level for timing of input signals is 1.40V.
64
-
-
80%
20%
CC
Min Max
7.5
15
, V
-
- 75
CCQ
64
-
-
I/O
= 3.3 V +/-0.3 V, V
Min Max
16
8
-
- 8
64
L
-
-
= 50pF without termination.
Min Max
10
20
-
C
- 7K
L
64
-
-
GM72V66841ET/ELT
Min Max
SS
10
20
-
, V
- 7J
SSQ
64
-
-
OPEN
= 0 V)
Unit
ms
ns
ns
-7-
Notes
1
1