K4D551638F-LC40000 Samsung, K4D551638F-LC40000 Datasheet - Page 12

• Manufacturer Part Number: K4D551638F-LC40000
• Description: No Discount To Anyone!
• Manufacturer: Samsung

DECOUPLING CAPACITANCE GUIDE LINE
Note :
K4D551638F-TC
AC OPERATING TEST CONDITIONS
CAPACITANCE
Recommended decoupling capacitance added to power line at board.
Decoupling Capacitance between V
Decoupling Capacitance between V
Input reference voltage for CK(for single ended)
CK and CK signal maximum peak swing
CK signal minimum slew rate
Input Levels(V
Input timing measurement reference level
Output timing measurement reference level
Output load condition
Input capacitance( CK, CK )
Input capacitance(A
Input capacitance
( CKE, CS, RAS,CAS, WE )
Data & DQS input/output capacitance(DQ
Input capacitance(DM0 ~ DM3)
1. V
2. V
All V
All V
DD
SS
and V
and V
DD
SS
pins are connected in chip. All V
pins are connected in chip. All V
IH
SSQ
DDQ
/V
0
Parameter
IL
Parameter
~A
pins are separated each other
Parameter
pins are separated each other.
)
(V
12
DD
, BA
Output
=2.6V, T
0
~BA
DD
DDQ
1
)
and V
A
and V
= 25°C, f=1MHz)
0
~DQ
SS
SSQ
SSQ
DDQ
15
)
pins are connected in chip.
pins are connected in chip.
(Fig. 1) Output Load Circuit
(V
Z0=50Ω
DD
- 12 -
=2.6V ± 0.1V, T
Symbol
C
LOAD
C
C
C
C
C
OUT
IN1
IN2
IN3
IN4
V
REF
=30pF
Symbol
C
C
+0.35/V
0.50*V
See Fig.1
DC1
DC2
Value
V
V
1.5
1.0
V
REF
tt
A
tt
=0.5*V
= 0 to 65°C)
DDQ
R
REF
T
=50Ω
Min
1.0
1.0
1.0
1.0
1.0
-0.35
DDQ
V
=0.5*V
REF
0.1 + 0.01
0.1 + 0.01
256M GDDR SDRAM
Value
DDQ
Max
5.0
4.0
4.0
6.5
6.5
Rev 2.1 (Apr. 2005)
Unit
V/ns
V
V
V
V
V
Unit
uF
uF
Unit
pF
pF
pF
pF
pF
Note