IPB100N04S204ATMA1 Infineon, IPB100N04S204ATMA1 Datasheet - Page 7

• Manufacturer Part Number: IPB100N04S204ATMA1
• Description: Mosfet n-Ch 40v 100a To263-3
• Manufacturer: Infineon

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
900
800
700
600
500
400
300
200
100
= f(T
0
48
46
44
42
40
38
36
25
-60
= f(T
j
)
D
j
); I
= 80A
-20
D
= 1 mA
75
20
T
T
j
j
60
[°C]
[°C]
125
100
140
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
= 100A pulsed
40
Q
Q
g
g
Q
Q
Q
gate
gd
gd
[nC]
80
IPB100N04S2-04
IPP100N04S2-04
Q
Q
gate
gate
8V
120
2006-03-02
32V