S9S08DZ60F2MLH Freescale Semiconductor, S9S08DZ60F2MLH Datasheet - Page 55

no-image

S9S08DZ60F2MLH

Manufacturer Part Number
S9S08DZ60F2MLH
Description
8-bit Microcontrollers - MCU M74K MASK ONLY-AUTO
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of S9S08DZ60F2MLH

Rohs
yes
Core
HCS08
Processor Series
MC9S08DZ60
Data Bus Width
8 bit
Maximum Clock Frequency
40 MHz
Program Memory Size
60 KB
Data Ram Size
4 K
On-chip Adc
Yes
Operating Supply Voltage
2.7 V to 5.5 V
Operating Temperature Range
- 40 C to + 125 C
Package / Case
LQFP-64
Mounting Style
SMD/SMT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S9S08DZ60F2MLH
Manufacturer:
Freescale
Quantity:
274
Part Number:
S9S08DZ60F2MLH
Manufacturer:
FREESCALE
Quantity:
5 928
Part Number:
S9S08DZ60F2MLH
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
S9S08DZ60F2MLH
Manufacturer:
FREESCALE
Quantity:
5 928
Part Number:
S9S08DZ60F2MLH
Manufacturer:
QFP64
Quantity:
20 000
Part Number:
S9S08DZ60F2MLH
0
Company:
Part Number:
S9S08DZ60F2MLH
Quantity:
238
Part Number:
S9S08DZ60F2MLHR
Manufacturer:
FREESCALE
Quantity:
20 000
4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the Flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the Flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and remains enabled after completion of the burst
program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
Freescale Semiconductor
The next burst program command sequence has begun before the FCCF bit is set.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this Flash memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
Burst Program Execution
PROGRAM AND
ERASE FLOW
Figure 4-2. Program and Erase Flowchart
MC9S08DZ60 Series Data Sheet, Rev. 4
0
WRITE TO FLASH OR EEPROM TO
WRITE COMMAND TO FCMD
BUFFER ADDRESS AND DATA
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
CLEAR ERROR
FACCERR?
FPVIOL OR
FACCERR?
START
FCCF?
DONE
1
NO
(1)
(2)
0
YES
(2)
before checking FCBEF or FCCF.
(1)
Wait at least four bus cycles
after reset.
Required only once
ERROR EXIT
Chapter 4 Memory
55

Related parts for S9S08DZ60F2MLH