IS61WV5128BLL-10TLI ISSI, Integrated Silicon Solution Inc, IS61WV5128BLL-10TLI Datasheet - Page 9

IC SRAM 4MBIT 10NS 44TSOP

IS61WV5128BLL-10TLI

Manufacturer Part Number
IS61WV5128BLL-10TLI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Asynchronousr
Datasheet

Specifications of IS61WV5128BLL-10TLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Access Time
10 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.4 V
Maximum Operating Current
40 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V, 3.3 V
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Supply Current
40mA
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1108
IS61WV5128BLL-10TLI
Q4714568

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
ISSI
Quantity:
675
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
PANASONIC
Quantity:
2 606
Part Number:
IS61WV5128BLL-10TLI
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS61WV5128BLL-10TLI
Quantity:
10 000
Company:
Part Number:
IS61WV5128BLL-10TLI-TR
Quantity:
1 000
IS61WV5128ALL/ALS, IS61WV5128BLL/BLS
IS64WV5128BLL/BLS
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output load-
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. I
08/10/09
Symbol
ing specified in Figure 1.
t
t
t
t
t
t
t
t
t
t
t
rC
AA
ohA
ACe
doe
hzoe
lzoe
hzCe
lzCe
Pu
Pd
(2)
(2)
(2
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
Power Up Time
Power Down Time
Min.
2.0
8
0
0
3
0
-8
Max.
4.5
8
8
3
3
8
(1)
(Over Operating Range)
Min. Max.
2.0
10
0
0
3
0
-10
4.5
10
10
10
4
4
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9

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