CY62136EV30LL-45ZSXI Cypress Semiconductor Corp, CY62136EV30LL-45ZSXI Datasheet - Page 7

• Manufacturer Part Number: CY62136EV30LL-45ZSXI
• Description: IC SRAM 2MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62136EV30LL-45ZSXI

• Memory Size: 2M (128K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 20 mA
• Organization: 128 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V or 3.3 V
• Memory Configuration: 128K X 16
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2068; CY62136EV30LL-45ZSXI

Switching Waveforms
Document #: 38-05569 Rev. *D
Notes
.
21. The device is continuously selected. OE, CE = V
22. WE is HIGH for read cycle.
23. Address valid prior to or coincident with CE and BHE, BLE transition LOW.
DATA OUT
CURRENT
DATA OUT
ADDRESS
ADDRESS
SUPPLY
BHE/BLE
V
CE
OE
CC
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
t
Figure 2. Read Cycle 1: Address Transition Controlled
LZCE
t
LZBE
t
t
ACE
LZOE
Figure 3. Read Cycle No. 2 : OE Controlled
t
DBE
IL
50%
t
OHA
, BHE and/or BLE = V
t
DOE
t
AA
t
RC
IL
.
t
RC
DATA VALID
[22, 23]
[21, 22]
DATA VALID
CY62136EV30 MoBL
t
HZBE
t
t
HZOE
HZCE
t
PD
50%
IMPEDANCE
HIGH
Page 7 of 15
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