CY62136EV30LL-45ZSXI Cypress Semiconductor Corp, CY62136EV30LL-45ZSXI Datasheet - Page 9

IC SRAM 2MBIT 45NS 44TSOP

CY62136EV30LL-45ZSXI

Manufacturer Part Number
CY62136EV30LL-45ZSXI
Description
IC SRAM 2MBIT 45NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY62136EV30LL-45ZSXI

Memory Size
2M (128K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
20 mA
Organization
128 K x 16
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V or 3.3 V
Memory Configuration
128K X 16
Supply Voltage Range
2.2V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2068
CY62136EV30LL-45ZSXI
Switching Waveforms
Notes
Document #: 38-05569 Rev. *D
28. If CE goes HIGH simultaneously with WE = V
29. During this period, the I/Os are in output state and input signals should not be applied.
ADDRESS
ADDRESS
DATAI/O
BHE/BLE
DATA I/O
BHE/BLE
CE
WE
CE
WE
NOTE 29
NOTE 29
t
SA
Figure 7. Write Cycle No. 4: BHE/BLE Controlled, OE LOW
(continued)
t
SA
Figure 6. Write Cycle No. 3: WE Controlled, OE LOW
IH
t
HZWE
, the output remains in a high impedance state
t
HZWE
t
AW
t
AW
t
SCE
t
t
BW
SCE
t
PWE
t
t
WC
WC
t
PWE
t
BW
DATA
DATA
t
t
SD
SD
IN
IN
[28]
t
HD
t
HD
[28]
t
HA
CY62136EV30 MoBL
t
t
HA
LZWE
t
LZWE
Page 9 of 15
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