IDT70T3339S133BFI IDT, Integrated Device Technology Inc, IDT70T3339S133BFI Datasheet

IC SRAM 9MBIT 133MHZ 208FBGA

IDT70T3339S133BFI

Manufacturer Part Number
IDT70T3339S133BFI
Description
IC SRAM 9MBIT 133MHZ 208FBGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70T3339S133BFI

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
9M (512K x 18)
Speed
133MHz
Interface
Parallel
Voltage - Supply
2.4 V ~ 2.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
208-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
70T3339S133BFI
800-1378

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70T3339S133BFI
Manufacturer:
IDT
Quantity:
850
Part Number:
IDT70T3339S133BFI
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70T3339S133BFI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Functional Block Diagram
NOTES:
1. Address A
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and
©2010 Integrated Device Technology, Inc.
Features:
OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode.
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.4 (200MHz)/3.6ns (166MHz)/
– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Interrupt and Collision Detection Flags
Full synchronous operation on both ports
– 5ns cycle time, 200MHz operation (14Gbps bandwidth)
– Fast 3.4ns clock to data out
– Data input, address, byte enable and control registers
FT/PIPE
FT/PIPE
CE
CE
18
R/W
OE
0L
1L
L
L
L
is a NC for the IDT70T3319. Also, Addresses A
L
UB
LB
L
L
4.2ns (133MHz)(max.)
CLK
L
1/0
1/0
1
REPEAT
0
CNTEN
A
ADS
18L
0a 1a
A
0L
(1)
L
L
a
L
COL
I/O
INT
0L
L
L
0b 1b
- I/O
b
17L
0/1
1b 0b 1a 0a
Counter/
Address
CE 0 L
Reg.
CE1 L
a b
HIGH-SPEED 2.5V
512/256/128K X 18
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
R/ W L
ZZ
L
(2)
18
and A
Dout9-17_L
Dout0-8_L
Din_L
ADDR_L
512/256/128K x 18
17
B
W
0
L
B
W
1
L
MEMORY
INTERRUPT
DETECTION
COLLISION
are NC's for the IDT70T3399.
ARRAY
CONTROL
LOGIC
LOGIC
ZZ
Dout9-17_R
Dout0-8_R
ADDR_R
B
W
1
R
1
B
W
0
R
Din_R
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output Mode
2.5V (±100mV) power supply for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 166MHz and 133MHz
Available in a 256-pin Ball Grid Array (BGA) and 208-pin fine
pitch Ball Grid Array (fpBGA)
Supports JTAG features compliant with IEEE 1149.1
Green parts available, see ordering information
– 1.5ns setup to clock and 0.5ns hold on all control, data,
– Self-timed write allows fast cycle time
ZZ
and address inputs @ 200MHz
R
(2)
R/ W R
Counter/
Address
0a 1a
Reg.
CE 0 R
CE1 R
b a
0b
1b
0/1
I/O
1b 0b
0R
b
- I/O
COL
17R
INT
1a 0a
REPEAT
ADS
CNTEN
R
A
a
R
A
0R
IDT70T3339/19/99S
R
18R (1)
R
R
TDO
TDI
1/0
1/0
1
0
CLK
R
5652 drw 01
JTAG
,
UB
LB
R
R
R/W
FT/PIPE
OE
CE
CE
FT/PIPE
APRIL 2010
R
R
0R
1R
R
R
TCK
TMS
TRST
DSC-5652/7
,

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IDT70T3339S133BFI Summary of contents

Page 1

... Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ ...

Page 2

... The IDT70T3339/19/ high-speed 512/256/128k x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times ...

Page 3

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Pin Configuration (3,4,5,6,9) 01/13/ TDI NC A (2) 17L INT NC TDO A (1) L 18L COL I/O ...

Page 4

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Pin Configurations(con't) 01/13/ INT I TDO L SS COL NC V TDI PIPE I/O V DDQL 9R ...

Page 5

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Pin Names Left Port Right Port CE CE Chip Enables (Input R/W R/W Read/Write Enable (Input Output Enable (Input) ...

Page 6

... Counter Set to last valid ADS load (n) I/O , UB, LB and OE and LB the rising edge of CLK, regardless of all other memory control signals including CE IL 6.42 6 Industrial and Commercial Temperature Ranges (1,2,3,4) Lower Byte I/O MODE 0-8 High-Z Deselected–Power Down High-Z Deselected–Power Down High-Z ...

Page 7

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Maximum Operating Temperature and Supply Voltage Commercial Industrial NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. Recommended DC Operating Conditions with V Symbol V V ...

Page 8

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Absolute Maximum Ratings Symbol Rating V V Terminal Voltage TERM with Respect to GND DD ( Terminal Voltage TERM DDQ (V ) with Respect to GND ...

Page 9

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter CE and CE I Dynamic Operating DD L Current (Both Outputs Disabled, (1) Ports Active ...

Page 10

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM AC Test Conditions (V Input Pulse Levels (Address & Controls) Input Pulse Levels (I/Os) Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load DATA OUT ∆ tCD (Typical, ...

Page 11

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) Symbol (1) t Clock Cycle Time (Flow-Through) CYC1 (1) t Clock Cycle Time (Pipelined) CYC2 (1) t Clock ...

Page 12

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Timing Waveform of Read Cycle for Pipelined Operation (2) (FT/PIPE = CH2 CLK ...

Page 13

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Timing Waveform of a Multi-Device Pipelined Read t CYC2 t t CH2 CL2 CLK ADDRESS (B1 0(B1) DATA OUT(B1) t ...

Page 14

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Timing Waveform of Left Port Write to Pipelined Right Port Read CLK "A" R/W "A " ADDRESS "A" MATC ...

Page 15

... CNTEN, and REPEAT = Addresses do not have to be accessed sequentially since ADS = V are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled) t CYC2 t t CH2 ...

Page 16

... Output state (High, Low, or High-impedance) is determined by the previous cycle control signals UB, LB, and ADS = V , CNTEN, and REPEAT = Addresses do not have to be accessed sequentially since ADS = V reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity ...

Page 17

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Timing Waveform of Pipelined Read with Address Counter Advance t CYC2 t CH2 CLK ADDRESS SAD HAD ADS CNTEN ( DATA ...

Page 18

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs) t CYC2 t CH2 CLK ADDRESS (3) INTERNAL ADDRESS t t SAD HAD ADS ...

Page 19

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Waveform of Interrupt Timing CLK R ADDRESS (3) L 7FFFF ( INS INT R ...

Page 20

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Waveform of Collision Timing Both Ports Writing with Left Port Clock Leading CLK L t OFS ( ADDRESS L COL L CLK ...

Page 21

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Timing Waveform - Entering Sleep Mode R/W Timing Waveform - Exiting Sleep Mode R/W OE DATA OUT (4) NOTES IH. 2. All timing is same for ...

Page 22

... Both ports writing - there is a risk that the two ports will interfere with each other, and the data stored in memory will not be a valid write from either port (it may essentially be a random combination of the two). Therefore, the collision flag is output on both ports ...

Page 23

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Depth and Width Expansion The IDT70T3339/19/99 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure ...

Page 24

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM JTAG Timing Specifications t JF TCK (1) Device Inputs / TDI/TMS (2) Device Outputs / TDO TRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, and TRST. 2. ...

Page 25

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Identification Register Definitions Instruction Field Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) NOTE: 1. Device ID for IDT70T3319 is 0x334. Device ...

Page 26

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Ordering Information XXXXX A 999 A Device Power Speed Package Type NOTES: 1. 166MHz I-Temp is not available in the BF-208 package. 2. 200Mhz is not available in the BF-208 package. ...

Page 27

IDT70T3339/19/99S High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM Datasheet Document History: 01/20/03: Initial Datasheet 04/25/03: Page 11 Added Capacitance Derating drawing Page 12 Changed t INS 11/11/03: Page 10 Updated power numbers in DC Electrical Characteristics table Page 12 ...

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