CY7C1019D-10VXI Cypress Semiconductor Corp, CY7C1019D-10VXI Datasheet - Page 3

• Manufacturer Part Number: CY7C1019D-10VXI
• Description: IC SRAM 1MBIT 10NS 32SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1019D-10VXI

• Memory Size: 1M (128K x 8)
• Package / Case: 32-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 80 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Memory Configuration: 128K X 8
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: SOJ
• No. Of Pins: 32
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Density: 1Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 17b
• Package Type: SOJ
• Operating Temp Range: -40C to 85C
• Supply Current: 80mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1964-5; CY7C1019D-10VXI

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied............................................. –55C to +125C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
Electrical Characteristics
Note
Document #: 38-05464 Rev. *F
V
V
V
V
I
I
I
I
I
2. V
IX
OZ
CC
SB1
SB2
Parameter
OH
OL
IH
IL
IL
(min) = –2.0V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Automatic CE Power-Down
Current—TTL Inputs
Automatic CE Power-Down
Current—CMOS Inputs
[2]
CC
[2]
...................................–0.5V to V
Operating Supply Current
................................–0.5V to V
CC
IH
(max) = V
to Relative GND
Description
CC
+ 1V for pulse durations of less than 5 ns.
(Over the Operating Range)
[2]
[2]
... –0.5V to +6.0V
CC
CC
I
I
GND < V
GND < V
V
I
f = f
Max V
V
Max V
V
+ 0.5V
+ 0.5V
OH
OL
OUT
CC
IN
IN
= 8.0 mA
max
= –4.0 mA
> V
> V
= Max,
= 0 mA,
CC
CC
IH
CC
= 1/t
, CE > V
, CE > V
I
I
or V
< V
< V
– 0.3V, or V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
RC
Test Conditions
CC
CC
Industrial
IN
Range
, Output Disabled
< V
IH
CC
IL
– 0.3V,
, f = f
IN
< 0.3V, f = 0
max
–40C to +85C
Temperature
Ambient
100 MHz
83 MHz
66 MHz
40 MHz
–10 (Industrial)
–0.5
Min
2.4
2.2
–1
–1
5V  0.5V
V
CY7C1019D
CC
V
CC
Max
0.4
0.8
+1
+1
80
72
58
37
10
3
+ 0.5
Page 3 of 13
Speed
10 ns
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
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