STF2LN60K3 STMicroelectronics, STF2LN60K3 Datasheet - Page 17

• Manufacturer Part Number: STF2LN60K3
• Description: MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET
• Manufacturer: STMicroelectronics

Specifications of STF2LN60K3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2 A
• Resistance Drain-source Rds (on): 4.5 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220FP
• Fall Time: 21 ns
• Gate Charge Qg: 12 nC
• Power Dissipation: 45 W
• Rise Time: 8.5 ns
• Typical Turn-off Delay Time: 23.5 ns

STD2LN60K3, STF2LN60K3, STU2LN60K3
5
Packaging mechanical data
Table 13.
Figure 26. DPAK footprint
a. All dimension are in millimeters
Dim.
D1
A0
B0
B1
K0
P0
P1
P2
W
D
R
E
F
T
DPAK (TO-252) tape and reel mechanical data
Min.
10.4
1.65
2.55
0.25
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
6.7
Tape
mm
(a)
Doc ID 023500 Rev 1
6.7
Max.
10.6
12.1
1.85
2.75
0.35
16.3
1.6
7.6
4.1
8.1
2.1
7
1.8
Dim.
G
A
B
C
D
N
T
3
Base qty.
Bulk qty.
1.6
1.6
Min.
12.8
20.2
16.4
1.5
50
Packaging mechanical data
2.3
2.3
Reel
mm
Max.
2500
2500
13.2
18.4
22.4
330
AM08850v1
17/20