STP31N65M5 STMicroelectronics, STP31N65M5 Datasheet - Page 3

• Manufacturer Part Number: STP31N65M5
• Description: MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
• Manufacturer: STMicroelectronics

Specifications of STP31N65M5

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 22 A
• Resistance Drain-source Rds (on): 0.148 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 150 W

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5
1
Electrical ratings
Table 2.
1. Limited by maximum junction temperature.
2. I
Table 3.
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4.
R
Symbol
Symbol
Symbol
dv/dt
R
R
I
thj-pcb
DM
P
E
V
thj-case
V
thj-amb
I
T
AR
SD
I
I
TOT
AS
ISO
T
GS
stg
D
D
j
(1)
(2)
≤ 22 A, di/dt ≤ 400 A/µs; V
(1)
Avalanche current, repetetive or not repetetive
(pulse width limited by T
Single pulse avalanche energy (starting t
I
d
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-
case max
Thermal resistance junction-
pcb max
Thermal resistance junction-
ambient max
= I
Absolute maximum ratings
Thermal data
Avalanche characteristics
AR
; V
dd
C
Parameter
=50)
= 25 °C)
Parameter
DS
Parameter
C
Doc ID 022848 Rev 2
peak < V
= 25 °C
jmax
)
(BR)DSS
C
C
= 25 °C
= 100 °C
D
0.83
2
30
PAK
, V
DD
j
=25°C,
=400 V
TO-220FP
I
2
PakFP
4.17
TO-220
TO-247
D
Value
13.9
2
62.5
150
22
88
PAK
TO-220
- 55 to 150
Value
Value
410
± 25
150
5
15
0.83
TO-220FP
Electrical ratings
I
2
13.9
PakFP
22
88
2500
30
TO-247
(1)
(1)
(1)
50
Unit
mJ
A
°C/W
°C/W
°C/W
V/ns
Unit
Unit
°C
°C
W
V
A
A
A
V
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