BUZ73 H3046 Infineon Technologies, BUZ73 H3046 Datasheet - Page 3

• Manufacturer Part Number: BUZ73 H3046
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ73 H3046

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-262
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 40 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ73H3046XK BUZ73H3046XKSA1 SP000683002

Electrical Characteristics, at T
Rev. 2.4
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
GS
DD
GS
DD
GS
DD
GS
≥
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 50
= 50
= 50
= 50
2
*
I
D *
Ω
Ω
Ω
Ω
R
DS
DS
DS
GS
GS
GS
GS
DS(on)max,
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
I
D
D
D
D
D
= 4.5 A
= 3 A
= 3 A
= 3 A
= 3 A
j
= 25˚C, unless otherwise specified
Symbol
g
C
C
C
t
t
t
t
Page 3
d(on)
r
d(off)
f
fs
iss
oss
rss
-
-
-
min.
-
-
-
-
3
Values
typ.
40
55
30
4.2
400
85
45
10
max.
-
130
70
15
60
75
40
530
2009-11-10
BUZ 73 H
pF
ns
Unit
S