BUZ73 H3046 Infineon Technologies, BUZ73 H3046 Datasheet - Page 6

• Manufacturer Part Number: BUZ73 H3046
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ73 H3046

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-262
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 40 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ73H3046XK BUZ73H3046XKSA1 SP000683002

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Rev. 2.4
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
13
11
10
16
12
10
A
9
8
A
7
6
5
4
3
2
1
0
8
6
4
2
0
DS
0
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 40W
= 80 µs
DS(on)max
2
2
3
4
l
4
k
j
D
5
i
= f ( V
h
6
6
g
GS
7
)
8
8
e
c
a
f
d
b
V
V
V GS [V]
V
GS
e
f
g
h
i
j
k 10.0
l
a
b
c
d
DS
V
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10
11
Page 6
Typ. forward transconductance g
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
DS
fs
DS (on)
DS (on)
≥
2 x I
6.0
5.0
3.5
4.5
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
S
Ω
0
D
0
= ƒ( I
V
V
x R
GS
GS
4.0
4.5
a
a
p
= 80 µs,
[V] =
[V] =
D
GS
DS(on)max
5.0
2
b
2
)
a
5.5
c
4
4
6.0
d
b
6.5
e
6
7.0
6
f
c
fs
7.5
g
8
= f
8
8.0
h
( I
d
10
D
9.0
i
)
2009-11-10
10.0
BUZ 73 H
A
j
I
D
I
A
D
e
20.0
k
k
j
h
f
12
i
14
g