PSMN016-100XS,127 NXP Semiconductors, PSMN016-100XS,127 Datasheet

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PSMN016-100XS,127

Manufacturer Part Number
PSMN016-100XS,127
Description
MOSFET N-CH 100V 16 MOHMS STD LVL MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN016-100XS127.pdf (14 pages)

Specifications of PSMN016-100XS,127

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
22.7 A
Resistance Drain-source Rds (on)
13 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220F
Minimum Operating Temperature
- 55 C
Power Dissipation
46.1 W
Factory Pack Quantity
50
1. Product profile
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state resistance V
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 4 — 6 March 2012
High efficiency due to low switching
and conduction losses
AC-to-DC power supply equipment
Motor control
Conditions
T
T
T
see
V
see
V
V
see
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
Figure
Figure
Figure 3
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; T
≤ 100 V; unclamped; R
12; see
14; see
j
D
D
≤ 175 °C
j(init)
GS
= 10 A; T
= 10 A; V
Figure 2
= 10 V; see
= 25 °C; I
Figure 13
Figure 15
j
DS
= 25 °C;
= 50 V;
D
GS
= 32.1 A;
Figure 1
= 50 Ω;
Isolated package
Suitable for standard level gate drive
Server power supplies
Synchronous rectification
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
13
14.2
46.2
-
-
Max
100
32.1
46.1
16
-
138
Unit
V
A
W
mΩ
nC
nC
mJ

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PSMN016-100XS,127 Summary of contents

Page 1

... PSMN016-100XS N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 4 — 6 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... SOT186A (TO-220F) Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS Graphic symbol mbb076 Version SOT186A © NXP B.V. 2012. All rights reserved. ...

Page 3

... P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS Min - = 20 kΩ -20 Figure 1 - Figure °C; see Figure -55 -55 ...

Page 4

... DSon All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS 003aag616 (1) ( (ms) AL =10 μ 100 μ 100 (V) DS © NXP B.V. 2012. All rights reserved. ...

Page 5

... Conditions MHz 50 Hz ≤ f ≤ 60 Hz; RH ≤ sinusoidal waveform; clean and dust free All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS Min Typ Figure ...

Page 6

... °C; see Figure 16; j see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS Min Typ Max = 25 °C 100 - - = -55 ° 4 °C ...

Page 7

... (A) D Fig 9. Transfer characteristics; drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS Min Typ Max - 0.8 1 126 - 003aag620 (V) GS 003aag622 = 175 ° ...

Page 8

... Fig 11. Sub-threshold drain current as a function of 003aag623 5.5 6 100 I (A) D Fig 13. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS − (A) min typ −2 10 −3 10 −4 10 −5 10 −6 10 ...

Page 9

... Fig 15. Gate-source voltage as a function of gate 003aag626 C (pF) C iss C oss C rss (V) DS Fig 17. Input and reverse transfer capacitances as a All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS 80V (V) 8 50V V = 20V charge ...

Page 10

... scale 0.7 15.8 6.5 10.3 2.7 2.54 5.08 0.4 15.2 6.3 9.7 1.7 REFERENCES JEDEC JEITA 3-lead TO-220F All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS mounting base ( max. 0.6 14.4 3.30 3.2 2.6 3 0.4 13.5 2.79 3.0 2.3 EUROPEAN PROJECTION SOT186A ...

Page 11

... N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A) Data sheet status Change notice Product data sheet - Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS Supersedes PSMN016-100XS v.3 PSMN016-100XS v.2 © NXP B.V. 2012. All rights reserved ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 6 March 2012 PSMN016-100XS © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN016-100XS All rights reserved. Date of release: 6 March 2012 Document identifier: PSMN016-100XS ...

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