IPD090N03LGATMA1 Infineon Technologies, IPD090N03LGATMA1 Datasheet

IPD090N03LGATMA1

Manufacturer Part Number

IPD090N03LGATMA1

Description

MOSFET

Manufacturer

Infineon Technologies

Datasheet

1.IPD090N03LGATMA1.pdf (9 pages)

Specifications of IPD090N03LGATMA1

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

40 A

Resistance Drain-source Rds (on)

7.5 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-252

Fall Time

2.6 ns

Forward Transconductance Gfs (max / Min)

53 S

Gate Charge Qg

15 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

42 W

Rise Time

3 ns

Part # Aliases

IPD090N03LGBTMA1 SP000680636

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