BSS169H6327XT Infineon Technologies, BSS169H6327XT Datasheet
BSS169H6327XT
Specifications of BSS169H6327XT
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BSS169H6327XT Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V indicator on reel GS(th) • Pb-free lead-plating; RoHS compliant • Halogen-free according to AEC61249-2-21 • Qualified according to AEC Q101 Type Package BSS169 ...
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Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current Gate-source leakage current On-state drain current Drain-source on-state resistance Transconductance Threshold voltage V sorted in bands GS(th) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation =f tot A 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0 [°C] [° Safe operating area =f =25 °C; D ...
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Typ. output characteristics =f =25 ° parameter 0.5 0 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0 ...
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Drain-source on-state resistance =f =0. DS(on -60 -60 -20 -20 20 ...
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Forward characteristics of reverse diode =f parameter 150 °C 150 ° ...
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Package Outline: Footprint: Dimensions in mm Rev. 1.8 Rev. 1.8 Packaging: page 8 page 8 BSS169 ######## ######## ...
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... Infineon Technologies components may be used in life-support devices or systems only with Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can the express written approval of Infineon Technologies failure of such components can ...