BSS169H6327XT Infineon Technologies, BSS169H6327XT Datasheet - Page 4

• Manufacturer Part Number: BSS169H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS169H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 mA
• Resistance Drain-source Rds (on): 6 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 27 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 2.7 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS169 BSS169H6327XTSA1 H6327

Rev. 1.8
Rev. 1.8
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
DS
-1
-2
-3
0
0
1
0
A
10
); T
)
0
0
limited by on-state
resistance
0
A
p
=25 °C; D =0
40
40
10
1
V
T
T
A
A
DS
80
80
[°C]
[°C]
[V]
1 ms
DC
100 µs
10 ms
10
10 µs
2
120
120
160
160
10
page 4
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.16
0.16
0.12
0.12
0.08
0.08
0.04
0.04
=f(t
10
10
10
10
0.2
0.2
A
0
0
3
2
1
0
); V
10
p
0
0
)
-4
GS
0.05
0.01
0.1
0.5
0.2
0.02
≥10 V
10
p
/T
-3
single pulse
40
40
10
-2
T
T
t
A
A
10
p
80
80
[°C]
[°C]
[s]
-1
10
0
120
120
10
BSS169
1
########
########
160
160
10
2