BSD840NH6327XT Infineon Technologies, BSD840NH6327XT Datasheet

Page 1

OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSD840N PG-SOT-363 H6327: 3000 ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance 2) 2 Performed FR4 PCB. The traces ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation =f tot A 0.6 0.5 0.4 0.3 0.2 0 Safe operating area =f =25 ° parameter ...

Page 5

Typ. output characteristics =f =25 ° parameter 1.6 1 1.8 V 0.8 2 0.2 0 Typ. transfer characteristics =f |>2|I ...

Page 6

Drain-source on-state resistance =f =0. DS(on 700 600 500 98 % 400 300 200 100 0 -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =16 Ω =f parameter: T j(start Drain-source breakdown voltage =f =250 µA V BR(DSS ...

Page 8

Package Outline: Footprint: Reflow soldering: Dimensions in mm Rev 2.3 SOT-363 Packing: page 8 BSD840N 2011-07-14 ...

Page 9

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...