BSD840NH6327XT Infineon Technologies, BSD840NH6327XT Datasheet - Page 6

• Manufacturer Part Number: BSD840NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSD840NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 880 mA
• Resistance Drain-source Rds (on): 400 mOhms at 2.5 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 0.9 nS
• Gate Charge Qg: 0.26 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.2 nS
• Typical Turn-off Delay Time: 7.8 nS
• Part # Aliases: BSD840N BSD840NH6327XTSA1 H6327

Rev 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
700
600
500
400
300
200
100
10
10
10
DS
=f(T
0
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz; T
=0.88 A; V
5
20
98 %
GS
V
T
DS
j
=2.5 V
60
10
[°C]
typ
[V]
j
Coss
Ciss
=25°C
Crss
100
15
140
180
page 6
20
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
-0.4
10
10
10
1.2
0.8
0.4
10
10
=f(T
SD
0
-1
-2
-3
1
0
-60
)
0
j
); V
D
j
-20
DS
=V
0.4
150 °C
GS
; I
20
D
25 °C
=1.6 µA
V
T
2 %
SD
j
typ
60
0.8
[°C]
98 %
[V]
150 °C, 98%
25 °C, 98%
100
1.2
BSD840N
140
2011-07-14
180
1.6