STL6N3LLH6 STMicroelectronics, STL6N3LLH6 Datasheet

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STL6N3LLH6

Manufacturer Part Number
STL6N3LLH6
Description
MOSFET N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG
Manufacturer
STMicroelectronics
Datasheet

Specifications of STL6N3LLH6

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
6 A
Resistance Drain-source Rds (on)
0.04 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerFLAT 2x2
Fall Time
5.4 ns
Gate Charge Qg
3.6 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
2.4 W
Rise Time
11.2 ns
Typical Turn-off Delay Time
9.4 ns
Features
Applications
Description
This device is an N-channel Power MOSFET
developed using the 6
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R
Table 1.
October 2012
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STL6N3LLH6 30 V
Order code
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Switching application
DS(on)
STL6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™
Order code
* Q
DS(on)
Device summary
V
g
DSS
industry benchmark
in all packages.
0.025 Ω (V
0.04 Ω (V
th
R
generation of STripFET™
DS(on)
Power MOSFET in a PowerFLAT™ 2x2 package
GS
GS
max.
=4.5 V)
=10 V)
DS(on)
Marking
STG1
6 A 2.4W
I
D
Doc ID 023231 Rev 2
P
TOT
Figure 1.
PowerFLAT™ 2x2
1
Package
2
3
Internal schematic diagram
1(D)
6(D)
PowerFLAT™ 2x2
D
Datasheet — preliminary data
STL6N3LLH6
2(D)
5(D)
6
5
Tape and reel
4
Packaging
3(G)
4(S)
S
1
2
www.st.com
AM11269v1
3
1/14
14

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STL6N3LLH6 Summary of contents

Page 1

... N-channel 30 V, 0.021 Ω typ STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Features Order code V R DSS DS(on) 0.025 Ω (V STL6N3LLH6 30 V 0.04 Ω ■ industry benchmark DS(on) g ■ Extremely low on-resistance R ■ High avalanche ruggedness ■ ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 023231 Rev 2 STL6N3LLH6 ...

Page 3

... STL6N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage DS V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT T Operating junction temperature J Storage temperature T stg 1. Pulse width limited by safe operating area Table 3 ...

Page 4

... f=1 MHz 4 (see Figure 14) Parameter Test conditions 4.7 Ω (see Figure 13) Doc ID 023231 Rev 2 STL6N3LLH6 Min. Typ. Max 125 °C J ± = 250 µ 0.021 0.025 0.032 0.04 D Min. Typ. Max. ...

Page 5

... STL6N3LLH6 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% ...

Page 6

... Doc ID 023231 Rev 2 Thermal impedance Zthj-pcb=K*Rthj-pcb, Rthj-pcb=145 C Transfer characteristics I D ( Static drain-source on-resistance (Ω 4 STL6N3LLH6 AM15375v1 2 t (s) p AM15369v1 V (V) GS AM15372v1 12 I (A) D ...

Page 7

... STL6N3LLH6 Figure 8. Capacitance variations C (pF MHz 100 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 1 0.8 0.6 0.4 0 Figure 12. Source-drain diode forward characteristics V SD (V) T =-55° 0.9 0.8 0.7 0.6 T =150°C J 0.5 0.4 0.3 0 Figure 9. AM15370v1 R DS(on) (norm) Ciss Coss Crss 20 V (V) DS Figure 11 ...

Page 8

... Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 023231 Rev 2 STL6N3LLH6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL6N3LLH6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Doc ID 023231 Rev 2 Package mechanical data ® ...

Page 10

... Package mechanical data Table 8. PowerFLAT™ 2x2 mechanical data Dim 10/14 mm. Min. Typ. 0.70 0.75 0.00 0.02 0.20 0.25 0.30 1.90 2.00 1.90 2.00 0.90 1.00 0.80 0.90 0.55 0.65 0.15 0.25 0.20 0.30 0.25 0.35 0.20 0.25 0.65 0.75 Doc ID 023231 Rev 2 STL6N3LLH6 Max. 0.80 0.05 0.35 2.10 2.10 1.10 1.00 0.75 0.35 0.40 0.45 0.30 0.85 ...

Page 11

... STL6N3LLH6 Figure 19. PowerFLAT™ drawing Doc ID 023231 Rev 2 Package mechanical data 8368575_REV_B 11/14 ...

Page 12

... Package mechanical data Figure 20. PowerFLAT™ recommended footprint (dimensions in millimeters) 12/14 Doc ID 023231 Rev 2 STL6N3LLH6 Footprint ...

Page 13

... STL6N3LLH6 5 Revision history Table 9. Document revision history Date 25-May-2012 11-Oct-2012 Revision 1 First release – Added Section 2.1: Electrical characteristics – R values (typ. and max.) updated DS(on) 2 – Typical values updated in – Minor text changes. Doc ID 023231 Rev 2 Revision history Changes (curves). Table 5, 6 and ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 023231 Rev 2 STL6N3LLH6 ...

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