BUK9237-55A /T3 NXP Semiconductors, BUK9237-55A /T3 Datasheet

no-image

BUK9237-55A /T3

Manufacturer Part Number
BUK9237-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK9237-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
0.033 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-428
Fall Time
73 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
77 W
Rise Time
36 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
95 ns
Part # Aliases
BUK9237-55A,118
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK9237-55A
N-channel TrenchMOS logic level FET
Rev. 3 — 9 November 2010
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 5 V; T
= 10 V; I
= 5 V; I
1; see
D
mb
j
D
≤ 175 °C
= 15 A;
= 15 A;
= 25 °C;
Figure
Figure 2
Figure 3
11;
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
28
31
Max Unit
55
32
77
33
37
V
A
W
mΩ
mΩ

Related parts for BUK9237-55A /T3

BUK9237-55A /T3 Summary of contents

Page 1

... BUK9237-55A N-channel TrenchMOS logic level FET Rev. 3 — 9 November 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 13 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET Min ≤ sup = °C; ...

Page 3

... °C; unclamped GS j(init) 03nh71 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET Min - - -15 Figure 1; - Figure -55 - ° Ω ...

Page 4

... Product data sheet DSon −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET 03na99 = 10 μ 100 μ 100 (V) DS Conditions Min ...

Page 5

... see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET Min Typ Max 1 2.3 0 ...

Page 6

... V (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET 100 175 ° 0.2 0.4 0.6 Reverse diode current as a function of reverse diode voltage ...

Page 7

... GS Fig 10. Gate-source threshold voltage as a function of 03na97 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET 2.5 2 max 1.5 typ min 1 0 120 ...

Page 8

... 175 ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03na92 = 25 ° ...

Page 9

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9237-55A v.3 20101109 • Modifications: Various changes to content. • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 9 November 2010 BUK9237-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 November 2010 Document identifier: BUK9237-55A ...

Related keywords