PMF780SN T/R NXP Semiconductors, PMF780SN T/R Datasheet

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PMF780SN T/R

Manufacturer Part Number
PMF780SN T/R
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.PMF780SN_TR.pdf (12 pages)

Specifications of PMF780SN T/R

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.57 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Fall Time
4 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
560 mW
Rise Time
4 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
5 ns
Part # Aliases
PMF780SN,115
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT323 (SC-70), simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
M3D102
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
PMF780SN
N-channel TrenchMOS™ standard level FET
Rev. 01 — 10 February 2004
Surface mounted package
Low on-state resistance
Driver circuits
V
P
DS
tot
0.56 W
60 V
Simplified outline
Top view
SOT323 (SC-70)
1
3
MBC870
2
Symbol
Footprint 40% smaller than SOT23
Fast switching.
Switching in portable appliances.
I
R
D
DSon
0.57 A
920 m .
MBB076
g
d
s
Product data

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PMF780SN T/R Summary of contents

Page 1

M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information Table 1: Pinning - SOT323 (SC-70), simplified outline and symbol Pin ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name PMF780SN SC-70 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot ---------------------- - P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 5.1 Transient thermal impedance th(j-sp) (K/ 0.2 0.1 0.05 0.02 10 single pulse ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors (A) 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 3 DSon ( ...

Page 7

Philips Semiconductors 2.4 V GS(th) typ (V) 1.8 1.2 min 0 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors (A) 0.8 0.6 0.4 150 C 0 0.3 0 and 150 Fig 12. Source (diode forward) current ...

Page 9

Philips Semiconductors 7. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT b p max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE VERSION IEC SOT323 ...

Page 10

Philips Semiconductors 8. Soldering 2.35 0.85 Dimensions in mm. Fig 15. Reflow soldering footprint for SOT323 (SC70). 9. Revision history Table 6: Revision history Rev Date CPCN Description 01 20040210 - Product data (9397 750 12764). 9397 750 12764 Product ...

Page 11

Philips Semiconductors Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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