PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet
PHC21025 /T3
Specifications of PHC21025 /T3
Related parts for PHC21025 /T3
PHC21025 /T3 Summary of contents
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PHC21025 Complementary intermediate level FET Rev. 04 — 17 March 2011 1. Product profile 1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET plastic package using vertical D-MOS technology. This product is ...
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... NXP Semiconductors Table 1. Symbol Dynamic characteristics Q GD [1] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a thermal resistance from ambient to solder point of 90 K/W. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V gate-source voltage GS V gate-source voltage GSO I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors 2.5 P tot (W) 2.0 1.5 1.0 0 100 Fig 1. Power derating curve δ °C. s (1) R limitation. DSon Fig 3. SOAR; P-channel PHC21025 Product data sheet mlb836 ( 150 200 T (°C) s Fig 2. − (A) −10 (1) − δ −1 − −2 − ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder th(j-sp) point 2 10 δ j-s (K/W) 0.75 0.5 0.33 10 0.2 0.1 0.05 1 0.02 0.01 0 −1 10 −6 − Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PHC21025 Product data sheet Conditions −4 − ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance I on-state drain current DSon Dynamic characteristics Q total gate charge G(tot) PHC21025 Product data sheet ...
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... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter Q gate-source charge GS Q gate-drain charge GD C input capacitance iss C output capacitance oss C reverse transfer capacitance rss g transfer conductance fs t turn-off time off t turn-on time on Source-drain diode V source-drain voltage SD t reverse recovery time rr PHC21025 Product data sheet ...
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... NXP Semiconductors 600 C (pF) 400 200 Fig 5. Capacitance as a function of drain-source voltage; N-channel; typical values ( 4 3 Fig 7. Output characteristics: drain current as a function of drain-source voltage; N-channel; typical values ...
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... NXP Semiconductors ( Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; N-channel; typical values ( Fig 11. Gate-source voltage as a function of gate charge; N-channel; typical values PHC21025 Product data sheet mbe141 −10 ...
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... NXP Semiconductors ( 150 ° ° -55 °C. j Fig 13. Source current as a function of source-drain voltage; N-channel; typical values DSon (mΩ) (1)(2) (3)(4)(5) ( ≥ ° DSon ...
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... NXP Semiconductors 1.2 k 1.1 1.0 0.9 0.8 0.7 0.6 − Typical mA; V GSth D Fig 17. Temperature coefficient of gate-source threshold voltage Typical R at: DSon ( - ( -0 -4 Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel PHC21025 Product data sheet mbe138 1.8 k 1.6 1.4 1.2 1.0 0.8 0.6 100 150 T (°C) ...
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... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PHC21025 v.4 20110317 • Modifications: Various changes to content. PHC21025 v.3 20101217 PHC21025 Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 9 Legal information .14 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 9 ...