PSMN030-150B /T3 NXP Semiconductors, PSMN030-150B /T3 Datasheet
PSMN030-150B /T3
Specifications of PSMN030-150B /T3
Related parts for PSMN030-150B /T3
PSMN030-150B /T3 Summary of contents
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... PSMN030-150B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 13 December 2010 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... V; unclamped sup t = 100 µs p ≤ sup Ω; unclamped R GS All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Graphic symbol mbb076 3 Version SOT404 Min Max - 150 = 20 kΩ - 150 ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B 100 150 Normalized continuous drain current as a function of mounting base temperature 2 10 prior to avalanche = 150 °C ...
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... Z th(j-mb) δ = 0.5 (K/W) 0.2 −1 10 0.1 0.05 P 0.02 −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Min Typ - - - 50 003aaf141 t p δ −2 − (s) p Max Unit 0.6 K/W - K/W © NXP B.V. 2010. All rights reserved. ...
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... ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Min Typ Max = -55 °C 133 - - = 25 °C 150 - - 0.05 ...
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... (V) GS Fig 9. 003aaf146 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B 0.07 4.4 4.6 4.8 5 DS(on) (Ω) 5.2 0.05 0.03 0. °C j Drain-source on-state resistance as a function of drain current; typical values ...
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... GS Fig 13. Input, output and reverse transfer capacitances 003aaf152 V = 120 V DD 120 160 Q (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B (pF − MHz function of drain-source voltage ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. SOT404 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN030-150B v.2 20101213 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 13 December 2010 PSMN030-150B Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 December 2010 Document identifier: PSMN030-150B ...