BUK7675-100A /T3 NXP Semiconductors, BUK7675-100A /T3 Datasheet
BUK7675-100A /T3
Specifications of BUK7675-100A /T3
Related parts for BUK7675-100A /T3
BUK7675-100A /T3 Summary of contents
Page 1
... BUK7675-100A N-channel TrenchMOS standard level FET Rev. 02 — 31 July 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
Page 2
... BUK7675-100A_2 Product data sheet N-channel TrenchMOS standard level FET Simplified outline SOT404 (D2PAK) Rev. 02 — 31 July 2009 BUK7675-100A Graphic symbol mbb076 Version SOT404 © NXP B.V. 2009. All rights reserved ...
Page 3
... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET Min Max - 100 - 100 -20 20 and 16.2 Figure -55 ...
Page 4
... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7675-100A_2 Product data sheet DSon DS D D.C. 10 Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET 03nb34 t p δ 100 ...
Page 5
... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7675-100A_2 Product data sheet Conditions see Figure 4 −5 −4 − Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET Min Typ Max - - 1 03nb35 t p δ ...
Page 6
... ° ° see Figure /dt = -100 A/µ - ° Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET Min Typ Max 100 - - 4 500 - 0.05 10 ...
Page 7
... V (V) GS Fig 8. Forward transconductance as a function of drain current; typical values Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET 03nb30 (V) GS 03nb28 (A) D © NXP B.V. 2009. All rights reserved ...
Page 8
... R DSon (mΩ) 100 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET 03nb27 (nC) G 03nb32 (V)= 5.5 ...
Page 9
... C 1200 oss 1000 800 C rss 600 400 200 0 −2 − Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET 03nb26 = 175 ° ° 0.2 0.4 0.6 0.8 1 03nb33 (V) DS © NXP B.V. 2009. All rights reserved. ...
Page 10
... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
Page 11
... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7675-100A separated from data sheet BUK7575_7675-100A-01. BUK7575_7675-100A-01 20001024 (9397 750 07623) BUK7675-100A_2 ...
Page 12
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 31 July 2009 BUK7675-100A N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7675-100A_2 All rights reserved. Date of release: 31 July 2009 ...