PBSS4260PANP,115 NXP Semiconductors, PBSS4260PANP,115 Datasheet - Page 16

• Manufacturer Part Number: PBSS4260PANP,115
• Description: Transistors Bipolar - BJT 60V 2A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4260PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 70 mV, - 100 mV
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 140 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 290, 170
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 2 A
• Dc Current Gain Hfe Max: 430, 250
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
11. Test information
PBSS4260PANP
Product data sheet
Fig. 26. TR1 (NPN): BISS transistor switching time definition
Fig. 27. TR1 (NPN): Test circuit for switching times
All information provided in this document is subject to legal disclaimers.
12 December 2012
60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
PBSS4260PANP
© NXP B.V. 2012. All rights reserved
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