MT46V32M16TG-5B:F Micron Technology Inc, MT46V32M16TG-5B:F Datasheet - Page 74

IC DDR SDRAM 512MBIT 5NS 66TSOP

MT46V32M16TG-5B:F

Manufacturer Part Number
MT46V32M16TG-5B:F
Description
IC DDR SDRAM 512MBIT 5NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46V32M16TG-5B:F

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 38:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
NOP
74
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
512Mb: x4, x8, x16 DDR SDRAM
T2n
NOP
T3
Don’t Care
©2000 Micron Technology, Inc. All rights reserved.
Operations

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