MT46V32M16TG-5B:F Micron Technology Inc, MT46V32M16TG-5B:F Datasheet - Page 90

• Manufacturer Part Number: MT46V32M16TG-5B:F
• Description: IC DDR SDRAM 512MBIT 5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M16TG-5B:F

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Power-down (CKE Not Active)
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Unlike SDR SDRAMs, DDR SDRAMs require CKE to be active at all times an access is in
progress, from the issuing of a READ or WRITE command, until completion of the
access. Thus a clock suspend is not supported. For READs, an access completion is
defined when the read postamble is satisfied; for WRITEs, when the write recovery time
(
Power-down, as shown in Figure 55 on page 91, is entered when CKE is registered LOW
and all criteria in Table 33 on page 47 are met. If power-down occurs when all banks are
idle, this mode is referred to as precharge power-down; if power-down occurs when a
row is active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CK, CK#, and CKE. For
maximum power savings, the DLL is frozen during precharge power-down mode. Exiting
power-down requires the device to be at the same voltage and frequency as when it
entered power-down. However, power-down duration is limited by the refresh require-
ments of the device (
While in power-down, CKE LOW and a stable clock signal must be maintained at the
inputs of the DDR SDRAM, while all other input signals are “Don’t Care.” The power-
down state is synchronously exited when CKE is registered HIGH (in conjunction with a
NOP or DESELECT command). A valid executable command may be applied one clock
cycle later.
t
WR) is satisfied.
t
REFC or
90
t
REFC
AT
).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Operations