BCW29 /T3 NXP Semiconductors, BCW29 /T3 Datasheet - Page 4

• Manufacturer Part Number: BCW29 /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCW29 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 32 V
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 120 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCW29,235

NXP Semiconductors
PACKAGE OUTLINE
2004 Jan 13
PNP general purpose transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
4
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
BCW29; BCW30
A
Q
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23