MX0912B351Y TRAY NXP Semiconductors, MX0912B351Y TRAY Datasheet
MX0912B351Y TRAY
Specifications of MX0912B351Y TRAY
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MX0912B351Y TRAY Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 ...
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Philips Semiconductors NPN microwave power transistor FEATURES Interdigitated structure; high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of ...
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Philips Semiconductors NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V collector-emitter voltage CEO V emitter-base voltage EBO I collector current C ...
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Philips Semiconductors NPN microwave power transistor THERMAL CHARACTERISTICS T = 125 C unless otherwise specified. j SYMBOL PARAMETER R thermal resistance from junction to mounting base CW th j-mb R thermal resistance from mounting base to heatsink CW; note 1 ...
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Philips Semiconductors NPN microwave power transistor 450 handbook, halfpage P L (W) 400 350 0. Fig.3 Load power as a function of frequency. (In broadband test circuit ...
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Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 1 s List of components COMPONENT DESCRIPTION L1 0.65 mm diameter copper wire L2 4 turns 0.65 mm diameter copper wire C1 DC block C2 tantalum capacitor C3 electrolytic capacitor C4 ...
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Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 40 handbook, full pagewidth Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 5.5 0.635 4.5 7 ...
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Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0 325 Fig.7 Input impedance as a function of frequency associated with optimum load impedance. ...
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Philips Semiconductors NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 3.3 2.9 3.3 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. 1997 Feb 19 12.85 max 0.15 max ...
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Philips Semiconductors NPN microwave power transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...
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Philips Semiconductors NPN microwave power transistor 1997 Feb 19 NOTES 11 Product specification MX0912B351Y ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...