MZ0912B100Y TRAY NXP Semiconductors, MZ0912B100Y TRAY Datasheet
MZ0912B100Y TRAY
Specifications of MZ0912B100Y TRAY
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MZ0912B100Y TRAY Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 ...
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... Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells recommended for new designs. The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange ...
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... Philips Semiconductors NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot (peak power) T storage temperature ...
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... Philips Semiconductors NPN microwave power transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to mounting-base T th j-mb R thermal resistance from mounting-base to heatsink T th mb-h Z thermal impedance from junction to heatsink Notes 1. See “ Mounting recommendations in the General part of handbook SC19a” Equivalent thermal impedance under pulsed microwave operating conditions. ...
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... Philips Semiconductors NPN microwave power transistors 130 handbook, halfpage P L (W) 120 110 0. Fig.4 Load power as a function of frequency. (In broadband test circuit as shown in Fig.7) 1997 Feb 20 MGL047 handbook, halfpage 1.15 1.25 f (GHz Fig.5 5 Product specification MX0912B100Y; MZ0912B100Y 50 C (%) ...
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... Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 1 s List of components COMPONENT DESCRIPTION L1 0.65 mm diameter copper wire L2 4 turns 0.65 mm diameter copper wire C1 capacitor C2 tantalum capacitor C3 electrolytic capacitor C4 feedthrough bypass capacitor C5, C6 variable gigatrim capacitor 1997 Feb 300 Fig.6 Pulse definition. ...
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... Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 40 Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 0.635 Fig.7 Broadband test circuit. 7 Product specification MX0912B100Y; MZ0912B100Y 0.635 ...
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... Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 0 100 Fig.8 Input impedance as a function of frequency associated with optimum load impedance. handbook, full pagewidth 0 100 Fig.9 Optimum load impedance as a function of frequency associated with input impedance. ...
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... Philips Semiconductors NPN microwave power transistors PACKAGE OUTLINES handbook, full pagewidth 3.3 2.9 Dimensions in mm. Torque on nut: max 0.4 Nm. Recommended screw: M3 Recommended pitch for mounting screw: 19 mm. 1997 Feb 20 12.85 max 0.15 max 3 23 max seating plane 3.7 max 1 3.3 2 8.25 16.5 Fig.10 SOT439A. 9 Product specification MX0912B100Y; MZ0912B100Y ...
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... Philips Semiconductors NPN microwave power transistors handbook, full pagewidth 0.1 3.5 2.9 X 3.4 3.2 Dimensions in mm. Torque on nut: max 0.5 Nm. Recommended screw: M3 1997 Feb 20 24 max 0 seating plane Y 3 min 2 16.5 Fig.11 SOT443A. 10 Product specification MX0912B100Y; MZ0912B100Y 6.4 max 1.7 max 0.5 X 10.5 23 10.5 max max max 0.5 X MBC663 0.5 Y ...
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... Philips Semiconductors NPN microwave power transistors DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains fi ...
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