BC847BPN /T3 NXP Semiconductors, BC847BPN /T3 Datasheet - Page 2

• Manufacturer Part Number: BC847BPN /T3
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC847BPN /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC847BPN,135

NXP Semiconductors
2. Pinning information
BC847_SER
Product data sheet
1.4 Quick reference data
Table 2.
Table 3.
Symbol
V
I
h
Pin
SOT23, SOT323, SOT416
1
2
3
SOT883
1
2
3
C
FE
CEO
Parameter
collector-emitter voltage
collector current
DC current gain
Quick reference data
Pinning
h
h
h
FE
FE
FE
base
emitter
collector
base
emitter
collector
Description
All information provided in this document is subject to legal disclaimers.
group A
group B
group C
Rev. 8 — 20 August 2012
open base
V
Conditions
CE
= 5 V; I
45 V, 100 mA NPN general-purpose transistors
C
= 2 mA
Simplified outline
1
2
1
Transparent
top view
3
006aaa144
Min
-
-
110
110
200
420
BC847 series
2
3
Typ
-
-
-
180
290
520
Graphic symbol
© NXP B.V. 2012. All rights reserved.
45
100
220
450
800
Max
800
1
1
sym021
sym021
3
2
3
2
Unit
V
mA
2 of 18