2PA1774R /T3 NXP Semiconductors, 2PA1774R /T3 Datasheet - Page 3

• Manufacturer Part Number: 2PA1774R /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of 2PA1774R /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 180 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-416
• Continuous Collector Current: 0.15 A
• Maximum Power Dissipation: 150 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: 2PA1774R,135

NXP Semiconductors
7. Characteristics
2PA1774_5
Product data sheet
Table 6.
T
[1]
Symbol
I
I
h
V
C
f
CBO
EBO
T
amb
FE
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation
voltage
collector
capacitance
transition
frequency
Characteristics
2PA1774Q
2PA1774R
2PA1774S
p
≤ 300 μs; δ ≤ 0.02.
Rev. 05 — 17 November 2009
I
Conditions
I
I
T
I
I
I
I
V
I
V
f = 100 MHz
E
E
C
C
C
B
E
E
j
CB
CE
= 0 A; V
= 0 A; V
= 150 °C
= −5 mA
= i
= −2 mA;
= 0 A; V
= −1 mA; V
= −50 mA;
= −12 V; f = 1 MHz
= −12 V;
e
= 0 A;
CB
CB
EB
= −30 V
= −30 V;
= −4 V
CE
= −6 V
[1]
[1]
[1]
Min
-
-
-
120
180
270
-
-
100
PNP general-purpose transistor
Typ
-
-
-
-
-
-
-
-
-
2PA1774
© NXP B.V. 2009. All rights reserved.
Max
−100
−5
−100
270
390
560
−200
2.2
-
Unit
nA
μA
nA
mV
pF
MHz
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